Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

2004 ◽  
Vol 84 (13) ◽  
pp. 2313-2315 ◽  
Author(s):  
C. X. Wang ◽  
K. Tsubaki ◽  
N. Kobayashi ◽  
T. Makimoto ◽  
N. Maeda
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Double Heterostructures ◽  
Electron Transport Properties

Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy

2004 ◽  
Vol 43 (6A) ◽  
pp. 3356-3359 ◽  
Author(s):  
Chengxin Wang ◽  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi ◽  
Toshiki Makimoto
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electron Transport Properties ◽  
Si Doped

The effect of organometallic vapor phase epitaxial growth conditions on wurtzite GaN electron transport properties

1995 ◽  
Vol 24 (11) ◽  
pp. 1525-1530 ◽  
Author(s):  
D. K. Gaskill ◽  
A. E. Wickenden ◽  
K. Doverspike ◽  
B. Tadayon ◽  
L. B. Rowland
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Electron Transport Properties

Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grown by low pressure metalorganic vapor phase epitaxy

2003 ◽  
Vol 93 (9) ◽  
pp. 5460-5464
Author(s):  
L. K. Hanamoto ◽  
C. M. A. Farias ◽  
A. B. Henriques ◽  
C. V. B. Tribuzy ◽  
P. L. Souza ◽  
...  
Keyword(s):  
Transport Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Interface Layers
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