scholarly journals Multistable Charge Build-Up and a New Switching Principle in Coherent-Electron Tunneling Devices

1993 ◽  
Vol 32 (Part 2, No. 4A) ◽  
pp. L520-L523 ◽  
Author(s):  
Mathias Wagner ◽  
Hiroshi Mizuta
Keyword(s):  
Electron Tunneling ◽  
Tunneling Devices

Ultrafast Electron Tunneling Devices—From Electric‐Field Driven to Optical‐Field Driven

2021 ◽  
pp. 2101449
Author(s):  
Shenghan Zhou ◽  
Ke Chen ◽  
Matthew Thomas Cole ◽  
Zhenjun Li ◽  
Mo Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Electron Tunneling ◽  
Optical Field ◽  
Tunneling Devices

scholarly journals Shot noise in ferromagnetic single-electron tunneling devices

1999 ◽  
Vol 60 (17) ◽  
pp. 12246-12255 ◽  
Author(s):  
B. R. Bułka ◽  
J. Martinek ◽  
G. Michałek ◽  
J. Barnaś
Keyword(s):  
Shot Noise ◽  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Tunneling Devices

Polytype heterostructures for electron tunneling devices

2003 ◽  
Author(s):  
R. Beresford ◽  
L.F. Luo ◽  
K. Longenbach ◽  
W.I. Wang
Keyword(s):  
Electron Tunneling ◽  
Tunneling Devices

Fabrication of multilayer single‐electron tunneling devices

1995 ◽  
Vol 66 (3) ◽  
pp. 305-307 ◽  
Author(s):  
E. H. Visscher ◽  
S. M. Verbrugh ◽  
J. Lindeman ◽  
P. Hadley ◽  
J. E. Mooij
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Tunneling Devices

scholarly journals Characterization of all-chromium tunnel junctions and single-electron tunneling devices fabricated by direct-writing multilayer technique

1999 ◽  
Vol 86 (12) ◽  
pp. 6956-6964 ◽  
Author(s):  
H. Scherer ◽  
Th. Weimann ◽  
P. Hinze ◽  
B. W. Samwer ◽  
A. B. Zorin ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Single Electron ◽  
Direct Writing ◽  
Single Electron Tunneling ◽  
Tunneling Devices

SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER NANOSTRUCTURES

1992 ◽  
Vol 06 (13) ◽  
pp. 2321-2343 ◽  
Author(s):  
V.J. GOLDMAN ◽  
BO SU ◽  
J.E. CUNNINGHAM
Keyword(s):  
Coulomb Blockade ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Tunneling Current ◽  
Theoretical Models ◽  
Single Electron ◽  
Double Barrier ◽  
Current Voltage ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

We review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models.

Investigation of the offset charge noise in single electron tunneling devices

1997 ◽  
Vol 46 (2) ◽  
pp. 303-306 ◽  
Author(s):  
H. Wolf ◽  
F.J. Ahlers ◽  
J. Niemeyer ◽  
H. Scherer ◽  
T. Weimann ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Single Electron ◽  
Single Electron Tunneling ◽  
Tunneling Devices ◽  
Charge Noise
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