Preparation of BaTiO3and SrTiO3Polycrystalline Thin Films on Flexible Polymer Film Substrate by Hydrothermal Method

1990 ◽  
Vol 29 (Part 1, No. 11) ◽  
pp. 2467-2472 ◽  
Author(s):  
Nobuo Ishizawa ◽  
Hidekuni Banno ◽  
Motoo Hayashi ◽  
Seung Eul Yoo ◽  
Masahiro Yoshimura
Keyword(s):  
Thin Films ◽  
Polymer Film ◽  
Hydrothermal Method ◽  
Polymer Film Substrate ◽  
Flexible Polymer ◽  
Film Substrate

Effects of the Substrate on the Determination of SEBS Thin Film Mechanical Properties by Nanoindentation

2006 ◽  
Vol 315-316 ◽  
pp. 766-769
Author(s):  
Yong Zhi Cao ◽  
Ying Chun Liang ◽  
Shen Dong ◽  
T. Sun ◽  
Bo Wang
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Polymer Film ◽  
Young’S Modulus ◽  
Penetration Depth ◽  
Young's Modulus ◽  
Polymer Film Substrate ◽  
Film Substrate ◽  
Composite Hardness

In order to investigate nanoindentation data of polymer film-substrate systems and to learn more about the mechanical properties of polymer film-substrate systems, SEBS (styreneethylene/ butylene-styrene) triblock copolymer thin film on different substrate systems have been tested with a systematic variation in penetration depth and substrate characteristics. Nanoindentation experiments were performed using a Hysitron TriboIndenter with a Berkvoich tip. The resulting data were analyzed in terms of load-displacement curves and various comparative parameters, such as hardness and Young’s modulus. The results obtained by the Oliver and Pharr method show how the composite hardness and Young’s modulus are different for different substrates and different penetration depth.

Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

1989 ◽  
Vol 54 (17) ◽  
pp. 1678-1680 ◽  
Author(s):  
K. Nakatani ◽  
M. Ogasawara ◽  
K. Suzuki ◽  
H. Okaniwa ◽  
K. Hamamoto ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Tensile Stress ◽  
Amorphous Silicon ◽  
Polymer Film ◽  
Hydrogenated Amorphous Silicon ◽  
Polymer Film Substrate ◽  
Film Substrate ◽  
Hydrogenated Amorphous

Preparation and Properties of a-Si: H Solar Cells on Organic Polymer Film Substrate

1982 ◽  
Vol 21 (S2) ◽  
pp. 239 ◽  
Author(s):  
Hiroshi Okaniwa ◽  
Kenji Nakatani ◽  
Mitsuaki Yano ◽  
Mitsuo Asano ◽  
Kazutomi Suzuki
Keyword(s):  
Solar Cells ◽  
Polymer Film ◽  
Organic Polymer ◽  
Polymer Film Substrate ◽  
Film Substrate

Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering

1989 ◽  
Vol 47 ◽  
pp. 172-173
Author(s):  
O. Eibl ◽  
G. Gieres ◽  
H. Behner
Keyword(s):  
Thin Films ◽  
Cross Sections ◽  
Intermediate Layer ◽  
Amorphous State ◽  
Critical Currents ◽  
Dc Sputtering ◽  
State Process ◽  
Diffraction Patterns ◽  
Film Substrate ◽  
Substrate Temperatures

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

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