CW Laser Heating Effects and Mode Splitting of the Raman Spectra of the (Dy and Y)Ba2Cu3O7-δSuperconductors

1989 ◽  
Vol 28 (Part 1, No. 4) ◽  
pp. 598-603 ◽  
Author(s):  
Chien-Rong Huang ◽  
Yung-Sheng Chang ◽  
Ming-Chih Lee
Keyword(s):  
Raman Spectra ◽  
Laser Heating ◽  
Mode Splitting ◽  
Cw Laser ◽  
Heating Effects

Influence of thermal and laser heating effects on the Raman spectra of luminescent yellow silicon fiber

2000 ◽  
Vol 87-89 ◽  
pp. 353-356
Author(s):  
P.H Duong ◽  
H.K Phan ◽  
N.T.T Tam ◽  
D.X Thanh ◽  
N.X Nghia ◽  
...  
Keyword(s):  
Raman Spectra ◽  
Laser Heating ◽  
Heating Effects

Modelling of low power cw laser beam heating effects on A GaAs substrate

1998 ◽  
Vol 42 (5) ◽  
pp. 809-816 ◽  
Author(s):  
D. Abbott ◽  
B. Davis ◽  
B. Gonzalez ◽  
A. Hernandez ◽  
K. Eshraghian
Keyword(s):  
Laser Beam ◽  
Low Power ◽  
Gaas Substrate ◽  
Cw Laser ◽  
Heating Effects ◽  
Beam Heating ◽  
Laser Beam Heating

scholarly journals Mechanical modeling of bending stiffness degradation for soft-honeycomb sandwich structure under CW laser heating

AIP Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 025201 ◽  
Author(s):  
Jiawei Wang ◽  
Bin Li ◽  
Yongxiang Zhu ◽  
Weiping Liu ◽  
Lixiong Wu ◽  
...  
Keyword(s):  
Laser Heating ◽  
Sandwich Structure ◽  
Bending Stiffness ◽  
Stiffness Degradation ◽  
Mechanical Modeling ◽  
Cw Laser ◽  
Honeycomb Sandwich ◽  
Honeycomb Sandwich Structure

Raman Scattering as a Temperature Frobe for Laser Heating of Si

1982 ◽  
Vol 17 ◽  
Author(s):  
Dimitry Kirillov ◽  
James L. Merz
Keyword(s):  
Raman Scattering ◽  
Laser Beam ◽  
Laser Heating ◽  
Laser Power ◽  
Raman Scattering Spectrum ◽  
Phonon Line ◽  
Cw Laser ◽  
Scattering Spectrum ◽  
Beam Heating ◽  
Laser Beam Heating

ABSTRACTThe frequency of the phonon line in the Raman scattering spectrum recorded during CW laser-beam heating of Si was used as a characteristic of the lattice temperature inside the laser spot. It is shown that Raman scattering is a good temperature probe up to the laser power approaching optical damage of Si.

Laser-Heating Effect on Raman Spectra of Individual Suspended Single-Walled Carbon Nanotubes

2007 ◽  
Vol 111 (5) ◽  
pp. 1988-1992 ◽  
Author(s):  
Yingying Zhang ◽  
Hyungbin Son ◽  
Jin Zhang ◽  
Jing Kong ◽  
Zhongfan Liu
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectra ◽  
Laser Heating ◽  
Single Walled Carbon Nanotubes ◽  
Heating Effect ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

Laser Processing and Characterization of High-Tc Superconductors

1987 ◽  
Vol 99 ◽  
Author(s):  
W. H. Weber ◽  
E. M. Logothetis ◽  
R. E. Soiitis ◽  
G. W. Graham ◽  
J. T. Chen ◽  
...  
Keyword(s):  
Surface Layer ◽  
Raman Spectra ◽  
Laser Heating ◽  
Laser Processing ◽  
Structural Data ◽  
High Tc Superconductors ◽  
High Tc

ABSTRACTRaman spectra of several samples of YBa2Cu3O7 presented, correlated with resistivity and structural data, and compared with previous results. Laser heating to ∼1100°C in air is shown to produce a surface layer of Y2O3 and Y2BaCuO5. Similar heating of La2−x(Sr,Ba)xCuO4 produces a layer of La2O3. All of these compounds are readily identified by their Raman spectra.

Heating Effects of Desi Ghee Using Raman Spectroscopy

2018 ◽  
Vol 72 (6) ◽  
pp. 833-846 ◽  
Author(s):  
Naveed Ahmad ◽  
Muhammad Saleem ◽  
Mushtaq Ahmed ◽  
Shaukat Mahmood
Keyword(s):  
Principal Component Analysis ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Principal Component ◽  
Nondestructive Technique ◽  
Molecular Changes ◽  
Spectral Bands ◽  
Heating Effects ◽  
Excitation Laser ◽  
First Time

Raman spectroscopy as a fast and nondestructive technique has been used to investigate heating effects on Desi ghee during frying/cooking of food for the first time. A temperature in the range of 140–180℃ has been investigated within which Desi ghee can be used safely for cooking/frying without much alteration of its natural molecular composition. In addition, heating effects in case of reuse, heating for different times, and cooking inside pressure cookers are also presented. An excitation laser at 785 nm has been used to obtain Raman spectra and the range of 540–1800 cm−1 is found to contain prominent spectral bands. Prominent variations have been observed in the Raman bands of 560–770 cm−1, 790–1160 cm−1, and 1180–1285 cm−1 with the rise in temperature. The spectral variations have been verified using classifier principal component analysis. It has been found that Desi ghee can be reused if heated below 180℃ and it can be heated up to 30 min without any appreciable molecular changes if a controlled heating can be managed.

Raman spectra and laser heating of YBa2Cu3O7 microbridges

1993 ◽  
Vol 54 (10) ◽  
pp. 1343-1346 ◽  
Author(s):  
A. Bock ◽  
J.C. Fretwurst ◽  
U. Merkt
Keyword(s):  
Raman Spectra ◽  
Laser Heating

Effects of Impurities on the Competition between Solid Phase Epitaxy and Random Crystallization In Ion-Implanted Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson ◽  
J.A. Roth ◽  
Y. Rytz-Froidevaux ◽  
J. Narayan
Keyword(s):  
Laser Heating ◽  
Crystallization Process ◽  
Solid Phase ◽  
Crystallization Rate ◽  
Solid Phase Epitaxy ◽  
Temperature Dependent ◽  
Kinetics Parameters ◽  
Time Resolved ◽  
Cw Laser ◽  
Ion Implanted

ABSTRACTThe temperature dependent competition between solid phase epitaxy and random crystallization in ion-implanted (As+, B+, F+, and BF2+) silicon films is investigated. Measurements of time-resolved reflectivity during cw laser heating show that in the As+, F+, and BF2+-implanted layers (conc 4×1020cm-3) epitaxial growth is disrupted at temperatures 1000°C. This effect is not observed in intrinsic films or in the B+-implanted layers. Correlation with results of microstructural analyses and computer simulation of the reflectivity experiment indicates that disruption of epitaxy is caused by enhancement of the random crystallization rate by arsenic and fluorine. Kinetics parameters for the enhanced crystallization process are determined; results are interpreted in terms of impurity-catalyzed nucleation during the random crystallization process.

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