High-Temperature Operation of Silicon Carbide MOSFET

1987 ◽  
Vol 26 (Part 1, No. 2) ◽  
pp. 310-311 ◽  
Author(s):  
Yasushi Kondo ◽  
Tetsuo Takahashi ◽  
Ken'ichi Ishii ◽  
Yutaka Hayashi ◽  
Eiichiro Sakuma ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Temperature Operation

Digital and Analogue Integrated Circuits in Silicon Carbide for High Temperature Operation

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000373-000377 ◽  
Author(s):  
E.P Ramsay ◽  
D.T. Clark ◽  
J.D. Cormack ◽  
A.E. Murphy ◽  
D.A Smith ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Nand Gate ◽  
Cmos Process ◽  
Flip Flop ◽  
Aero Engines ◽  
Simple Logic ◽  
High Temperature Operation

A need for high temperature integrated circuits is emerging in a number of application areas. As Silicon Carbide power discrete devices become more widely available, there is a growing need for control ICs capable of operating at the same temperatures and mounted on the same modules. Also, the use of high temperature sensors, in, for example, aero engines and in deep hydrocarbon and geothermal drilling applications results in a demand for high temperature sensor interface ICs. This paper presents new results on a range of simple logic and analogue circuits fabricated on a developing Silicon Carbide CMOS process which is intended for mixed signal integrated circuit applications such as those above. A small family of logic circuits, pin compatible with the 74xx series TTL logic parts, has been designed, fabricated and tested and includes, for example, a Quad Nand gate and a Dual D-type flip-flop. These have been found to be functional from room temperature up to 400°C. Analogue blocks have been investigated with a view to using switched capacitor or autozero techniques to compensate for temperature and time induced drifts, allowing very high temperature operation.

1200V 20A SiC BJTs operating at 250°C

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000091-000097
Author(s):  
Anders Lindgren ◽  
Martin Domeij ◽  
Tomas Hjort
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Qualitative Agreement ◽  
Series Resistance ◽  
Switching Behavior ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Spice Model ◽  
High Temperature Operation ◽  
Made In

Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 20A rated high temperature capable NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20–30 ns. The switching behavior is in qualitative agreement with SPICE simulations.

1200 V 6 A High Temperature SiC BJTs

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000160-000166 ◽  
Author(s):  
Anders Lindgren ◽  
Martin Domeij
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Qualitative Agreement ◽  
Series Resistance ◽  
Switching Behavior ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Spice Model ◽  
High Temperature Operation ◽  
Made In

Silicon carbide (SiC) bipolar junction transistors (BJTs) are normally-off devices which can block high voltages at high temperature operation. The SiC BJTs can be switched very fast with low losses [2] compared to BJT's made in silicon (Si), and can be operated at temperatures up to and above 250 °C. Vertical 1200V 6A rated NPN SiC BJTs were fabricated and packaged in a high-temperature capable metal package of the type TO-258. The transistors were characterized both statically and in terms of switching. A SPICE model was developed for the transistors, including the parasitic capacitances of the internal pn-junctions, as well as temperature dependence of the current gain and the collector series resistance. Switching measurements were performed showing VCE voltage rise- and fall-times in the range of 20 ns. The switching behavior is in qualitative agreement with SPICE simulations.

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

2006 ◽  
pp. 931-934
Author(s):  
Konstantin V. Vassilevski ◽  
I. Nikitina ◽  
Praneet Bhatnagar ◽  
A.B. Horsfall ◽  
Nicolas G. Wright ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Schottky Diodes ◽  
Avalanche Breakdown ◽  
High Temperature Operation

Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000136-000143
Author(s):  
Jim Richmond ◽  
Sei-Hyung Ryu ◽  
Qingchun (Jon) Zhang ◽  
Brett Hull ◽  
Mrinal Das ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Bipolar Junction Transistors ◽  
Power Devices ◽  
Temperature Range ◽  
Silicon Devices ◽  
Bipolar Switching ◽  
Operational Temperature ◽  
Full Benefit ◽  
High Temperature Operation

Power devices based on Silicon Carbide (SiC) have unmatched potential for extending the operational temperature range of power electronics well past what is possible with silicon devices. SiC JBS diodes are already demonstrating part of that potential but the full benefit will not be realized until a SiC power switch is available. Recently, normally off SiC unipolar and bipolar switching devices have become available with the manufacture of 1200V, 20A MOSFETs and 1200V, 20A bipolar junction transistors (BJT). While both of these device types have undergone considerable study, most of this characterization has been conducted in the normal commercial temperature range which has an upper limit of 150 – 175°C. The SiC BJT is considered to be a superior device for high temperature operation due to its lower on-state voltage and increased reliability due to it not having a gate oxide. As presented, the advantages of the SiC BJT over the SiC MOSFET are not as great as expected and may not warrant the increased complexity of dealing with the current driven base that the BJT requires. Otherwise, both devices offer exceptional performance at high temperature.

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