Monte Carlo Simulations of High-Carrier-Velocity Acceleration in Graphene Field-Effect Transistors by Local Channel Width Modulation

2012 ◽  
Vol 5 (4) ◽  
pp. 045102 ◽  
Author(s):  
Aizuddin Mohamad ◽  
Naoki Harada ◽  
Yuji Awano
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Width ◽  
High Carrier ◽  
Carrier Velocity

Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs)

2002 ◽  
Vol 14 (13) ◽  
pp. 3479-3497 ◽  
Author(s):  
D C Herbert ◽  
M J Uren ◽  
B T Hughes ◽  
D G Hayes ◽  
J C H Birbeck ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterojunction Field Effect Transistors

scholarly journals Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Velocity Saturation ◽  
Self Heating ◽  
Heating Effects ◽  
Carrier Velocity ◽  
High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

Anisotropic interfacial properties of monolayer C2N field effect transistors

2020 ◽  
Vol 22 (48) ◽  
pp. 28074-28085
Author(s):  
Mi-Mi Dong ◽  
Guang-Ping Zhang ◽  
Zong-Liang Li ◽  
Ming-Lang Wang ◽  
Chuan-Kui Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interfacial Properties ◽  
Next Generation ◽  
High Carrier ◽  
Optoelectronic Applications

Monolayer C2N is promising for next-generation electronic and optoelectronic applications due to its appropriate band gap and high carrier efficiency.

Monte Carlo study of apparent magnetoresistance mobility in nanometer scale metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (4) ◽  
pp. 044504 ◽  
Author(s):  
Karim Huet ◽  
Damien Querlioz ◽  
Wipa Chaisantikulwat ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monte Carlo Study ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nanometer Scale
Sign in / Sign up

Export Citation Format

Share Document