Anisotropic interfacial properties of monolayer C2N field effect transistors

2020 ◽  
Vol 22 (48) ◽  
pp. 28074-28085
Author(s):  
Mi-Mi Dong ◽  
Guang-Ping Zhang ◽  
Zong-Liang Li ◽  
Ming-Lang Wang ◽  
Chuan-Kui Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interfacial Properties ◽  
Next Generation ◽  
High Carrier ◽  
Optoelectronic Applications

Monolayer C2N is promising for next-generation electronic and optoelectronic applications due to its appropriate band gap and high carrier efficiency.

High carrier mobility in low band gap polymer-based field-effect transistors

2005 ◽  
Vol 87 (25) ◽  
pp. 252105 ◽  
Author(s):  
Miaoxiang Chen ◽  
Xavier Crispin ◽  
Erik Perzon ◽  
Mats R. Andersson ◽  
Tönu Pullerits ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Low Band Gap ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Low Band Gap Polymer

New poly(selenophene–thiophene) bearing π-conjugating spacers for polymer field-effect transistors and photovoltaic cells

2015 ◽  
Vol 6 (19) ◽  
pp. 3660-3670 ◽  
Author(s):  
Chi-Chou Chiu ◽  
Hung-Chin Wu ◽  
Chien Lu ◽  
Jung-Yao Chen ◽  
Wen-Chang Chen
Keyword(s):  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Power Conversion ◽  
Photovoltaic Cells ◽  
Field Effect Mobility ◽  
Photovoltaic Power ◽  
Optoelectronic Applications

Five new poly(selenophene–thiophene) were synthesized for polymer optoelectronic applications. The hole field effect mobility and polymer photovoltaic power conversion efficiency could be as high as 0.27 cm2 V−1 s−1 and 2.3 %, respectively.

Ballistic transport simulation of acceptor–donor C3N/C3B double-wall hetero-nanotube field effect transistors

2019 ◽  
Vol 21 (35) ◽  
pp. 19567-19574 ◽  
Author(s):  
Jianwei Zhao ◽  
Na Cheng ◽  
Yuanyuan He
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Channel Structure ◽  
Potential Candidate ◽  
Next Generation ◽  
One Dimensional ◽  
Transport Simulation ◽  
The One ◽  
Double Wall

The one-dimensional (1D) acceptor–donor (A–D) hetero-nanotube (HNT) has attracted much attention as a potential candidate for a channel structure of next-generation field effect transistors (FETs).

scholarly journals Small band gap copolymers based on furan and diketopyrrolopyrrole for field-effect transistors and photovoltaic cells

2011 ◽  
Vol 21 (5) ◽  
pp. 1600-1606 ◽  
Author(s):  
Johan C. Bijleveld ◽  
Bram P. Karsten ◽  
Simon G. J. Mathijssen ◽  
Martijn M. Wienk ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Photovoltaic Cells ◽  
Small Band

Importance of Solubilizing Group and Backbone Planarity in Low Band Gap Polymers for High Performance Ambipolar field-effect Transistors

2012 ◽  
Vol 24 (7) ◽  
pp. 1316-1323 ◽  
Author(s):  
Joong Suk Lee ◽  
Seon Kyoung Son ◽  
Sanghoon Song ◽  
Hyunjung Kim ◽  
Dong Ryoul Lee ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Band Gap ◽  
Low Band Gap Polymers
Sign in / Sign up

Export Citation Format

Share Document