Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

Stephen W. Kaun; Man Hoi Wong; Sansaptak Dasgupta; Soojeong Choi; Roy Chung; Umesh K. Mishra; James S. Speck

doi:10.1143/apex.4.024101

Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

Applied Physics Express ◽

10.1143/apex.4.024101 ◽

2011 ◽

Vol 4 (2) ◽

pp. 024101 ◽

Cited By ~ 38

Author(s):

Stephen W. Kaun ◽

Man Hoi Wong ◽

Sansaptak Dasgupta ◽

Soojeong Choi ◽

Roy Chung ◽

...

Keyword(s):

Dislocation Density ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Threading Dislocation ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Threading Dislocation Density

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Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3663573 ◽

2011 ◽

Vol 99 (22) ◽

pp. 223501 ◽

Cited By ~ 53

Author(s):

M. Ťapajna ◽

S. W. Kaun ◽

M. H. Wong ◽

F. Gao ◽

T. Palacios ◽

...

Keyword(s):

Dislocation Density ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Threading Dislocation ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Threading Dislocation Density ◽

Early Degradation

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Single-Event Damage-Induced Gate-Leakage Mechanisms in AlGaN/GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3075667 ◽

2021 ◽

pp. 1-6

Author(s):

Shaozhong Yue ◽

Zhangang Zhang ◽

Ziwen Chen ◽

Xuefeng Zheng ◽

Lei Wang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Single Event ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Cited By ~ 21

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2018.2601 ◽

2018 ◽

Vol 10 (2) ◽

pp. 185-189 ◽

Cited By ~ 1

Author(s):

Meilan Hao ◽

Quan Wang ◽

Lijuan Jiang ◽

Chun Feng ◽

Changxi Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Applied Physics Letters ◽

10.1063/1.4829062 ◽

2013 ◽

Vol 103 (19) ◽

pp. 193507 ◽

Cited By ~ 16

Author(s):

N. Killat ◽

M. Montes Bajo ◽

T. Paskova ◽

K. R. Evans ◽

J. Leach ◽

...

Keyword(s):

Dislocation Density ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Surface Step ◽

Electron Mobility Transistors ◽

Low Dislocation Density ◽

Bulk Gan ◽

Step Edges

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Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing

AIP Advances ◽

10.1063/1.4962544 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095102 ◽

Cited By ~ 7

Author(s):

W. A. Sasangka ◽

G. J. Syaranamual ◽

R. I. Made ◽

C. V. Thompson ◽

C. L. Gan

Keyword(s):

High Temperature ◽

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

Threading Dislocation ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dislocation Movement ◽

Gan On Si

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Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2018.2847664 ◽

2018 ◽

Vol 18 (3) ◽

pp. 359-363 ◽

Cited By ~ 1

Author(s):

Lixiang Chen ◽

Xiaohua Ma ◽

Jiejie Zhu ◽

Bin Hou ◽

Qing Zhu ◽

...

Keyword(s):

Electron Beam ◽

Direct Observation ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Induced Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electron Beam Induced Current

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Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.3340826 ◽

2010 ◽

Vol 107 (6) ◽

pp. 064501 ◽

Cited By ~ 14

Author(s):

S. Sudharsanan ◽

Shreepad Karmalkar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4871802 ◽

2014 ◽

Vol 104 (15) ◽

pp. 153510 ◽

Cited By ~ 23

Author(s):

Jie-Jie Zhu ◽

Xiao-Hua Ma ◽

Bin Hou ◽

Wei-Wei Chen ◽

Yue Hao

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Leakage Mechanism

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Reduced Reverse Gate Leakage Current for p‐GaN Gate High‐Electron‐Mobility Transistors by a Surface‐Etching Method

physica status solidi (a) ◽

10.1002/pssa.202000666 ◽

2021 ◽

pp. 2000666

Author(s):

Chi Sun ◽

Xiaoyu Ding ◽

Xing Wei ◽

Wenxin Tang ◽

Xiaodong Zhang ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Surface Etching ◽

Electron Mobility Transistors ◽

Etching Method

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