High Magnetoresistance Ratio and Low Resistance–Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes

2010 ◽  
Vol 3 (5) ◽  
pp. 053003 ◽  
Author(s):  
Kay Yakushiji ◽  
Kenji Noma ◽  
Takeshi Saruya ◽  
Hitoshi Kubota ◽  
Akio Fukushima ◽  
...  
2016 ◽  
Vol 10 (1) ◽  
pp. 013008 ◽  
Author(s):  
Koki Mukaiyama ◽  
Shinya Kasai ◽  
Yukiko K. Takahashi ◽  
Kouta Kondou ◽  
Yoshichika Otani ◽  
...  

2016 ◽  
Vol 108 (24) ◽  
pp. 242416 ◽  
Author(s):  
Ikhtiar ◽  
S. Kasai ◽  
P.-H. Cheng ◽  
T. Ohkubo ◽  
Y. K. Takahashi ◽  
...  

2010 ◽  
Vol 34 (3) ◽  
pp. 311-315 ◽  
Author(s):  
Y. Uehara ◽  
A. Furuya ◽  
K. Sunaga ◽  
T. Miyajima ◽  
H. Kanai

Author(s):  
Y. Nagamine ◽  
H. Maehara ◽  
K. Tsunekawa ◽  
D. D. Djayaprawira ◽  
N. Watanabe ◽  
...  

2009 ◽  
Author(s):  
H. D. Gan ◽  
K. Mizunuma ◽  
S. Ikeda ◽  
H. Yamamoto ◽  
K. Miura ◽  
...  

Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.


Nanoscale ◽  
2015 ◽  
Vol 7 (17) ◽  
pp. 8142-8148 ◽  
Author(s):  
Min-Su Jeon ◽  
Kyo-Suk Chae ◽  
Du-Yeong Lee ◽  
Yasutaka Takemura ◽  
Seung-Eun Lee ◽  
...  

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