Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

2010 ◽  
Vol 3 (2) ◽  
pp. 021002 ◽  
Author(s):  
Mitsuru Funato ◽  
Akio Kaneta ◽  
Yoichi Kawakami ◽  
Yohei Enya ◽  
Koji Nishizuka ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Exciton Localization ◽  
Ingan Quantum Wells

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

2010 ◽  
Vol 3 (1) ◽  
pp. 011003 ◽  
Author(s):  
Takashi Kyono ◽  
Yusuke Yoshizumi ◽  
Yohei Enya ◽  
Masahiro Adachi ◽  
Shinji Tokuyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Optical Polarization ◽  
Polarization Characteristics ◽  
Ingan Quantum Wells

Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes

2011 ◽  
Vol 11 (4) ◽  
pp. S167-S170 ◽  
Author(s):  
Jihoon Kim ◽  
Hyunsoo Kim ◽  
Sung-Nam Lee
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Ingan Quantum Wells

High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

2010 ◽  
Vol 3 (8) ◽  
pp. 082001 ◽  
Author(s):  
You-Da Lin ◽  
Shuichiro Yamamoto ◽  
Chia-Yen Huang ◽  
Chia-Lin Hsiung ◽  
Feng Wu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Quality

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

2019 ◽  
Vol 12 (7) ◽  
pp. 072003 ◽  
Author(s):  
Grzegorz Muziol ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
Krzesimir Szkudlarek ◽  
Szymon Stanczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Nitride Laser ◽  
Ingan Quantum Wells

Blue-purplish InGaN quantum wells with shallow depth of exciton localization

2005 ◽  
Vol 86 (19) ◽  
pp. 191902 ◽  
Author(s):  
Tetsuya Akasaka ◽  
Hideki Gotoh ◽  
Hedetoshi Nakano ◽  
Toshiki Makimoto
Keyword(s):  
Quantum Wells ◽  
Shallow Depth ◽  
Exciton Localization ◽  
Ingan Quantum Wells

Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue—green laser diodes

1998 ◽  
Vol 184-185 ◽  
pp. 580-584 ◽  
Author(s):  
M. Behringer ◽  
K. Ohkawa ◽  
V. Großmann ◽  
H. Heinke ◽  
K. Leonardi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Stability Issues

Inhomogeneity of InGaN quantum wells in GaN-based blue laser diodes

2007 ◽  
Vol 4 (7) ◽  
pp. 2788-2792 ◽  
Author(s):  
Sung-Nam Lee ◽  
H. Y. Ryu ◽  
H. S. Paek ◽  
J. K. Son ◽  
T. Sakong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Blue Laser ◽  
Ingan Quantum Wells

Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
S. F. Chichibu ◽  
M. Sugiyama ◽  
T. Onuma ◽  
T. Kuroda ◽  
A. Tackeuchi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Intrinsic Property ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Exciton Localization ◽  
Peak Energy ◽  
Stretched Exponential Decay ◽  
Ingan Quantum Wells

AbstractOptical properties of fully-strained wurtzite and zincblende InxGa1-xN/GaN multiple quantum well (MQW) structures were compared to discuss the origin of exciton localization. In contrast to the hexagonal InGaN MQWs, the photoluminescence (PL) peak energy of cubic InGaN MQWs showed a moderate blueshift with decreasing well thickness, L, and low-temperature PL decay time of the cubic MQWs did not depend strongly on L. The results imply that the wavefunction overlap in cubic InGaN MQWs was not reduced compared to the hexagonal ones, since they do not suffer from the electric field normal to the QW plane due either to spontaneous or piezoelectric polarization. Both MQWs exhibited a large and composition-dependent bandgap bowing, and time-resolved PL (TR-PL) signals showed a stretched-exponential decay even at room temperature. The exciton localization is considered to be an intrinsic property of InGaN.

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