Thermal degradation in InGaN quantum wells in violet and blue GaN-based laser diodes

2011 ◽  
Vol 11 (4) ◽  
pp. S167-S170 ◽  
Author(s):  
Jihoon Kim ◽  
Hyunsoo Kim ◽  
Sung-Nam Lee
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Ingan Quantum Wells

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells

2021 ◽  
Vol 13 (6) ◽  
pp. 7476-7484
Author(s):  
Julita Smalc-Koziorowska ◽  
Ewa Grzanka ◽  
Artur Lachowski ◽  
Roman Hrytsak ◽  
Mikolaj Grabowski ◽  
...  
Keyword(s):  
Thermal Degradation ◽  
Quantum Wells ◽  
Metal Vacancies ◽  
Ingan Quantum Wells

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

2010 ◽  
Vol 3 (2) ◽  
pp. 021002 ◽  
Author(s):  
Mitsuru Funato ◽  
Akio Kaneta ◽  
Yoichi Kawakami ◽  
Yohei Enya ◽  
Koji Nishizuka ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Exciton Localization ◽  
Ingan Quantum Wells

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

2019 ◽  
Vol 12 (7) ◽  
pp. 072003 ◽  
Author(s):  
Grzegorz Muziol ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
Krzesimir Szkudlarek ◽  
Szymon Stanczyk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Laser Diodes ◽  
Nitride Laser ◽  
Ingan Quantum Wells

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

2010 ◽  
Vol 3 (1) ◽  
pp. 011003 ◽  
Author(s):  
Takashi Kyono ◽  
Yusuke Yoshizumi ◽  
Yohei Enya ◽  
Masahiro Adachi ◽  
Shinji Tokuyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Green Laser ◽  
Optical Polarization ◽  
Polarization Characteristics ◽  
Ingan Quantum Wells

Inhomogeneity of InGaN quantum wells in GaN-based blue laser diodes

2007 ◽  
Vol 4 (7) ◽  
pp. 2788-2792 ◽  
Author(s):  
Sung-Nam Lee ◽  
H. Y. Ryu ◽  
H. S. Paek ◽  
J. K. Son ◽  
T. Sakong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Blue Laser ◽  
Ingan Quantum Wells

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes

2021 ◽  
Vol 118 (18) ◽  
pp. 182102
Author(s):  
Xiaoyu Zhao ◽  
Bin Tang ◽  
Liyan Gong ◽  
Junchun Bai ◽  
Jiafeng Ping ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Yellow Light ◽  
Light Emitting ◽  
Rational Construction ◽  
Ingan Quantum Wells

Directly correlated microscopy of trench defects in InGaN quantum wells

2021 ◽  
pp. 113255
Author(s):  
T.J. O'Hanlon ◽  
F C-P. Massabuau ◽  
A. Bao ◽  
M.J. Kappers ◽  
R.A. Oliver
Keyword(s):  
Quantum Wells ◽  
Ingan Quantum Wells ◽  
Correlated Microscopy
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