ELECTRICAL PROPERTIES AND STRUCTURES OF SOLID AND LIQUID GeS, SnS, AND PbS

1966 ◽  
Vol 44 (8) ◽  
pp. 853-860 ◽  
Author(s):  
G. Handfield ◽  
M. D'Amboise ◽  
M. Bourgon

The electrical conductivity of germanium(II) sulfide in the liquid state has been measured with a capillary-type cell. Both a-c. and d-c. methods were used. The conductivity of liquid GeS increases regularly with tempersature from 1.33 Ω−1 cm−1 at 664 °C to 2.52 Ω−1 cm−1 at 705 °C. The experimental facts lead to the conclusion that GeS remains a semiconductor in the liquid state with a conduction band situated at 2.5 eV above the valence band.The energy gaps of GeS, SnS, and PbS in the solid state are compared with those of the corresponding liquids. It is concluded that these sulfides, in the liquid state, have structures very similar to that of the solids. Liquid PbS has a structure somewhat similar to that of metals. In the case of SnS and GeS, heating and melting are accompanied by a gradual loosening of the double layers which constitute the crystals. Accumulated evidence indicates that the molecular character of SnS and GeS is increased on going from the solid to the liquid state.

2014 ◽  
Vol 979 ◽  
pp. 302-306 ◽  
Author(s):  
Chalermpol Rudradawong ◽  
Aree Wichainchai ◽  
Aparporn Sakulkalavek ◽  
Yuttana Hongaromkid ◽  
Chesta Ruttanapun

In this paper, the CuFeO2compound were prepared by classical solid state reaction (CSSR) and direct powder dissolved solution (DPDS) method from starting material metal oxides and metal powders. Preparation of two methods shows that, direct powder dissolved solution faster recover phases than classical solid state reaction method. The fastest method gets from starting materials Cu and Fe metal powders, the electrical conductivity, Seebeck coefficient, carrier concentration and mobility are 10.68 S/cm, 244.59 μV/K, 12.86×1016cm-3and 494.96 cm2/V.s, respectively. In addition, each CuFeO2compounds were investigated on crystal structure and electrical properties. From XRD and SEM results, all samples have a crystal structure delafossite-typeand a large grain boundary more than 15 μm by electrical conductivity corresponds to grain boundary and lattice parameter: a increases. Within this paper, from above results exhibit that preparation CuFeO2from Cu and Fe by direct powder dissolved solution method most appropriate for thermoelectric oxide materials due to high active for preparation else high lattice strain and high power factor are 0.00052 and 0.64×10-4W/mK2, respectively.


1988 ◽  
Vol 135 ◽  
Author(s):  
T.J. Lee ◽  
P.C. Yao ◽  
S.E. Hsu ◽  
D.J. Fray

AbstractThis study reports measurements of electrical properties of the solid state copper ion conductor CuZr2 (PO4)3.


2012 ◽  
Vol 512-515 ◽  
pp. 1564-1568
Author(s):  
Jia Song Zhang ◽  
Ye Fan Wu ◽  
Ling Hong Luo ◽  
Guo Yang Shen ◽  
Hui Su

Nano-sized electrolyte of CeO2 doped 8YSZ with 2%mol CuO (YSZDC)powders were synthesized by solid state reaction method. Powder characteristics and electrical properties was characterized by XRD,SEM and Electrochemical workstation.The results demonstrate that the as-synthesized Y0.08Zr0.72Ce0.2O1.6 (YSZDC) and Y0.08Zr0.72Ce0.18Cu 0.02O1.6-δ(YSZDC-Cu0.02) possessed similar powder characteristics, including cubic fluorite crystalline structure.About 150 °C reduction in densification temperature of Y0.08Zr0.72Ce0.18Cu0.02O1.6-δ was obtained when compared with Y0.08Zr0.72Ce0.2O1.6.The YSZDC-Cu0.02 pellets sintered at 1300 °C and the YSZDC sintered at 1450 °C exhibited relative densities of 95.66% and 94.73%,respectively.Electrolyte matrixs were prepared for electrolyte-supported SOFCs(ES-SOFC) , the suspension of NiO-YSZ anode was sprayed on the electrolyte, after co-sintering at 1300°C,electrolyte matrixs and anode were well adhered each othert, without connecting pores and cracks observed. Moerover, well electricity performance were showed by YSZDC and YSZDC-Cu0.02 at a testing temperature of 750°C,And the electrolyte conductivity didn’t decrease obviously with dopping CuO.


1961 ◽  
Vol 39 (4) ◽  
pp. 915-922 ◽  
Author(s):  
Denis Boutin ◽  
Marcel Bourgon

The electrical conductivity "σ" of tin (II) sulphide in the liquid state has been measured using a capillary type cell. Both a-c. and d-c. methods were used. The conductivity of SnS increases regularly with temperature, from approximately 24 ohm−1 cm−1 at 895 °C to 31.2 ohm−1 cm−1 at 930 °C. The similarity of results obtained with both a-c. and d-c. methods, the positive temperature coefficient of conductivity, the high value of the conductivity and the absence of electrolysis effects when passing heavy currents in the melt lead to the conclusion that SnS remains a semiconductor in the liquid state. The value of the energy gap has been calculated to be 1.9 ev for the liquid as compared to the value 1.2 ev for the solid. Conductivity measurements have been limited to the temperature of approximately 935 °C because of the decomposition of SnS at higher temperatures.


2016 ◽  
Vol 51 (18) ◽  
pp. 2565-2573 ◽  
Author(s):  
JY Suh ◽  
SE Shin ◽  
DH Bae

High electrical performances of polytetrafluoroethylene composites containing few-layer graphenes are established by solid-state processing. Polytetrafluoroethylene and FLG powders are mechanically mixed without solvents at room temperature, and hot-pressed. Few-layer graphenes are attached to the polytetrafluoroethylene powder, and gradually wrap the powder surface during milling with a low milling speed. The few-layer graphene-wrapped polytetrafluoroethylene powders readily facilitate the formation of a continuous few-layer graphene network due to the contact between adjacent few-layer graphene-wrapped powders. The final composites using few-layer graphene-wrapped polytetrafluoroethylene powders include a three-dimensional conducting network. Eventually, the wrapping morphology of the polytetrafluoroethylene/few-layer graphene powder results in a remarkable electrical conductivity of 7353 Sm−1 at 30 vol. %. few-layer graphene loading.


2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage


Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 


1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.


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