Design, synthesis, and properties of benzobisthiadiazole-based donor–π–acceptor–π–donor type of low-band-gap chromophores and polymers

2010 ◽  
Vol 88 (3) ◽  
pp. 192-201 ◽  
Author(s):  
Gang Qian ◽  
Zhi Yuan Wang

A novel low-band-gap chromophore (5, 0.86 eV) having fluorene as a donor, benzobisthiadiazole (BBTD) as an acceptor, and pyrrole as a π-spacer was successfully designed and synthesized, to probe the effect of π-spacer on the band-gap level of the donor–π–acceptor–π–donor type of chromophores. Compared with the thiophene spacer analogue (in compound 3), the intramolecular hydrogen bonding between the pyrrole and the neighboring BBTD unit pushes the absorption maximum and fluorescence emission of chromophore 5 into the near-infrared spectral region with a red shift of 172 and 158 nm, respectively. The same red-shift phenomenon can also be realized by addition of Lewis acid (e.g., BF3) to the BBTD-containing chromophores with other spacers. Attempt of using low-band-gap chromophore 5 in bulk heterojunction (BHJ) solar cells was made, showing a non-optimized photovoltaic device with the power conversion efficiency of 0.01%. A precursor approach to introduction of the alkaline-labile BBTD acceptor into the polymer backbone has been demonstrated by successful synthesis of low-band-gap polymer P2. The same strategy can be in principle applied to the synthesis of a series of low-band-gap chromophores or polymers with strong acceptors.

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.


2020 ◽  
Vol 56 (4) ◽  
pp. 523-526 ◽  
Author(s):  
Kun Qian ◽  
Chunrong Qu ◽  
Xiangyu Ma ◽  
Hao Chen ◽  
Martha Kandawa-Schulz ◽  
...  

Replacing donors’ S with O and Se will red shift NIR-II dyes’ fluorescence emission and offer good clarity/brightness for imaging.


RSC Advances ◽  
2016 ◽  
Vol 6 (18) ◽  
pp. 14893-14908 ◽  
Author(s):  
M. L. Keshtov ◽  
S. A. Kuklin ◽  
N. A. Radychev ◽  
A. Yu. Nikolaev ◽  
E. N. Koukaras ◽  
...  

Two D–A copolymers, F1 and F2, with fluorene and thiazole units were substituted, respectively, on a thiadiazoloquinoxaline (TDQ) unit to enhance the electron-accepting strength of TDQ.


2007 ◽  
Vol 91 (8) ◽  
pp. 083503 ◽  
Author(s):  
Nils-Krister Persson ◽  
Xiangjun Wang ◽  
Olle Inganäs

2015 ◽  
Author(s):  
Yuriy N. Luponosov ◽  
Jie Min ◽  
Alexander N. Solodukhin ◽  
Sergei N. Chvalun ◽  
Tayebeh Ameri ◽  
...  

2011 ◽  
Vol 12 (7) ◽  
pp. 1211-1215 ◽  
Author(s):  
Yanguang Zhang ◽  
Zhao Li ◽  
Salem Wakim ◽  
Salima Alem ◽  
Sai-Wing Tsang ◽  
...  

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