Tunable electrogenerated chemiluminescence from CdSe nanocrystals

2009 ◽  
Vol 87 (1) ◽  
pp. 386-391 ◽  
Author(s):  
Jigang Zhou ◽  
Jun Zhu ◽  
Jack Brzezinski ◽  
Zhifeng Ding
Keyword(s):  
Band Gap ◽  
Absorption Spectroscopy ◽  
Electrochemical Behavior ◽  
Light Emission ◽  
Tunneling Current ◽  
Optoelectronic Properties ◽  
Electrogenerated Chemiluminescence ◽  
Cdse Nanocrystals ◽  
Current Voltage ◽  
Vis Spectroscopy

Electrochemical behavior and related optoelectronic properties of CdSe nanocrystals (NCs) in aprotic solutions have been investigated. NCs of 2.50 ± 0.50 nm diameter were synthesized using a modified procedure in which the temperatures at the time of Se precursor injection and NC growth were controlled. The electrochemical band gap was found to agree with those determined by UV–vis absorption spectroscopy and by the tunneling current-voltage spectrum in the literature. Electrogenerated chemiluminescence of the NCs with peak maxima at 1.90 eV (red, 653 nm) and 2.55 eV (blue, 486 nm) can be generated and altered by scanning the voltage between –1.60 and –1.80 V and between –2.00 and –2.20 V, respectively. The results demonstrate the potential capability of the NCs for light emission tuned by the applied potential.Key words: CdSe nanocrystals, electrochemistry, electrogenerated chemiluminescence, UV–vis spectroscopy, photoluminescence.

Modification of optical properties of PC-PBT/Cr2O3 and PC-PBT/CdS nanocomposites by gamma irradiation

2020 ◽  
Vol 92 (2) ◽  
pp. 20402
Author(s):  
Kaoutar Benthami ◽  
Mai ME. Barakat ◽  
Samir A. Nouh
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Color Difference ◽  
Band Gap Energy ◽  
Polybutylene Terephthalate ◽  
Γ Irradiation ◽  
Gap Energy ◽  
Vis Spectroscopy ◽  
Oxygen Atoms

Nanocomposite (NCP) films of polycarbonate-polybutylene terephthalate (PC-PBT) blend as a host material to Cr2O3 and CdS nanoparticles (NPs) were fabricated by both thermolysis and casting techniques. Samples from the PC-PBT/Cr2O3 and PC-PBT/CdS NCPs were irradiated using different doses (20–110 kGy) of γ radiation. The induced modifications in the optical properties of the γ irradiated NCPs have been studied as a function of γ dose using UV Vis spectroscopy and CIE color difference method. Optical dielectric loss and Tauc's model were used to estimate the optical band gaps of the NCP films and to identify the types of electronic transition. The value of optical band gap energy of PC-PBT/Cr2O3 NCP was reduced from 3.23 to 3.06 upon γ irradiation up to 110 kGy, while it decreased from 4.26 to 4.14 eV for PC-PBT/CdS NCP, indicating the growth of disordered phase in both NCPs. This was accompanied by a rise in the refractive index for both the PC-PBT/Cr2O3 and PC-PBT/CdS NCP films, leading to an enhancement in their isotropic nature. The Cr2O3 NPs were found to be more effective in changing the band gap energy and refractive index due to the presence of excess oxygen atoms that help with the oxygen atoms of the carbonyl group in increasing the chance of covalent bonds formation between the NPs and the PC-PBT blend. Moreover, the color intensity, ΔE has been computed; results show that both the two synthesized NCPs have a response to color alteration by γ irradiation, but the PC-PBT/Cr2O3 has a more response since the values of ΔE achieved a significant color difference >5 which is an acceptable match in commercial reproduction on printing presses. According to the resulting enhancement in the optical characteristics of the developed NCPs, they can be a suitable candidate as activate materials in optoelectronic devices, or shielding sheets for solar cells.

scholarly journals Influence of Calcination Temperature on Crystal Growth and Optical Characteristics of Eu3+ Doped ZnO/Zn2SiO4 Composites Fabricated via Simple Thermal Treatment Method

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 115
Author(s):  
Suhail Huzaifa Jaafar ◽  
Mohd Hafiz Mohd Zaid ◽  
Khamirul Amin Matori ◽  
Sidek Hj. Ab Aziz ◽  
Halimah Mohamed Kamari ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Band Gap ◽  
Calcination Temperature ◽  
Emission Intensity ◽  
Emission Spectra ◽  
Treatment Method ◽  
Absorption Bands ◽  
Vis Spectroscopy ◽  
Doped Zno ◽  
Zno Crystal

This research paper proposes the usage of a simple thermal treatment method to synthesis the pure and Eu3+ doped ZnO/Zn2SiO4 based composites which undergo calcination process at different temperatures. The effect of calcination temperatures on the structural, morphological, and optical properties of ZnO/Zn2SiO4 based composites have been studied. The XRD analysis shows the existence of two major phases which are ZnO and Zn2SiO4 crystals and supported by the finding in the FT-IR. The FESEM micrograph further confirms the existence of both ZnO and Zn2SiO4 crystal phases, with progress in the calcination temperature around 700–800 °C which affects the existence of the necking-like shape particle. Absorption humps discovered through UV-Vis spectroscopy revealed that at the higher calcination temperature effects for higher absorption intensity while absorption bands can be seen at below 400 nm with dropping of absorption bands at 370–375 nm. Two types of band gap can be seen from the energy band gap analysis which occurs from ZnO crystal and Zn2SiO4 crystal progress. It is also discovered that for Eu3+ doped ZnO/Zn2SiO4 composites, the Zn2SiO4 crystal (5.11–4.71 eV) has a higher band gap compared to the ZnO crystal (3.271–4.07 eV). While, for the photoluminescence study, excited at 400 nm, the emission spectra of Eu3+ doped ZnO/Zn2SiO4 revealed higher emission intensity compared to pure ZnO/Zn2SiO4 with higher calcination temperature exhibit higher emission intensity at 615 nm with 700 °C being the optimum temperature. The emission spectra also show that the calcination temperature contributed to enhancing the emission intensity.

scholarly journals Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 484
Author(s):  
Matthias Schuster ◽  
Dominik Stapf ◽  
Tobias Osterrieder ◽  
Vincent Barthel ◽  
Peter J. Wellmann
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Coarse Grained ◽  
High Porosity ◽  
Low Band Gap ◽  
Seeding Layer ◽  
X Ray ◽  
Face To Face ◽  
Copper Indium ◽  
Vis Spectroscopy

Copper indium gallium sulfo-selenide (CIGS) based solar cells show the highest conversion efficiencies among all thin-film photovoltaic competition. However, the absorber material manufacturing is in most cases dependent on vacuum-technology like sputtering and evaporation, and the use of toxic and environmentally harmful substances like H2Se. In this work, the goal to fabricate dense, coarse grained CuInSe2 (CISe) thin-films with vacuum-free processing based on nanoparticle (NP) precursors was achieved. Bimetallic copper-indium, elemental selenium and binary selenide (Cu2−xSe and In2Se3) NPs were synthesized by wet-chemical methods and dispersed in nontoxic solvents. Layer-stacks from these inks were printed on molybdenum coated float-glass-substrates via doctor-blading. During the temperature treatment, a face-to-face technique and mechanically applied pressure were used to transform the precursor-stacks into dense CuInSe2 films. By combining liquid phase sintering and pressure sintering, and using a seeding layer later on, issues like high porosity, oxidation, or selenium- and indium-depletion were overcome. There was no need for external Se atmosphere or H2Se gas, as all of the Se was directly in the precursor and could not leave the face-to-face sandwich. All thin-films were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and UV/vis spectroscopy. Dense CISe layers with a thickness of about 2–3 µm and low band gap energies of 0.93–0.97 eV were formed in this work, which show potential to be used as a solar cell absorber.

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

scholarly journals Synthesis and Optoelectronic Properties of Iptycene–Naphthazarin Dyes

Synlett ◽  
2018 ◽  
Vol 30 (01) ◽  
pp. 54-58 ◽  
Author(s):  
Timothy Swager ◽  
Cagatay Dengiz ◽  
You-Chi Wu
Keyword(s):  
Single Crystal ◽  
Electronic Properties ◽  
Diels Alder ◽  
Optoelectronic Properties ◽  
Synthesis And Characterization ◽  
Nmr Analysis ◽  
X Ray ◽  
Vis Spectroscopy

We report the synthesis and characterization of iptycene–naphthazarin dyes by using a sequential Diels–Alder approach. The tautomerization of naphthazarin was used as the key step in the synthesis, with structures confirmed by single-crystal X-ray and NMR analysis. The systematic trends in electronic properties were investigated by UV/Vis spectroscopy. BF2 complexes of the dyes were prepared by reaction with BF3·OEt2 in CH2Cl2.

scholarly journals Synthesis of Fluorene Based Alternating Copolymers using Direct Arylation Polymerization

2021 ◽  
Vol 33 (2) ◽  
pp. 393-398
Author(s):  
Mohd Sani Sarjadi ◽  
Yap Leong Khen ◽  
Xin Lin Wong ◽  
Zuhair Jamain ◽  
Md Lutfor Rahman
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Active Layer ◽  
Optical Band Gap ◽  
Direct Arylation ◽  
Low Band Gap ◽  
Alternating Copolymers ◽  
Vis Spectroscopy ◽  
Ft Ir ◽  
Direct Arylation Polymerization

Many researches have been done to obtain a low band gap and high Polymeric solar cell (PSCs) polymer either by creating new polymer or revising reported polymers from previous studies. In present work, two new copolymers were synthesized through direct arylation polymerization to produce poly(9,9-didodecylfluorene-alt-benzo[c][1,2,5]thiadiazole (P1) and poly(9,9-didodecylfluorene-altthieno[ 3,2-b]thiophene) (P2). The P1 and P2 are donor-accepter copolymers. P1 and P2 were compared to investigate its suitability to be applied in PSCs. The polymers obtained were characterized using FT-IR, NMR and UV-Vis spectroscopy. P1 shows two adsorption bands at λmax1 = 243 nm and λmax2 = 320 nm, whereas P2 also shows two adsorption bands at λmax1 = 243 nm and λmax2 = 427 nm. The optical band gap was calculated, P1 enabled band gap of 3.88 eV while P2 showed band gap of 2.91 eV. This work could be provided an insight to design and synthesize more efficient fluorene-based copolymers as active layer of PSCs in due course.

scholarly journals Electron Spectrum and Tunneling Current of the Toroidal and Helical Graphene Nanoribbon-Quantum Dots Contact

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Mikhail B. Belonenko ◽  
Nikolay G. Lebedev ◽  
Alexander V. Zhukov ◽  
Natalia N. Yanyushkina
Keyword(s):  
Quantum Dots ◽  
Dirac Equation ◽  
Density Of States ◽  
Electron Spectrum ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Curved Space ◽  
Long Wave ◽  
Current Voltage ◽  
Current Voltage Characteristics

We study the electron spectrum and the density of states of long-wave electrons in the curved graphene nanoribbon based on the Dirac equation in a curved space-time. The current-voltage characteristics for the contact of nanoribbon-quantum dot have been revealed. We also analyze the dependence of the specimen properties on its geometry.

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