scholarly journals Crystal structure, stability, and optoelectronic properties of the organic-inorganic wide-band-gap perovskite CH3NH3BaI3 : Candidate for transparent conductor applications

2016 ◽  
Vol 94 (18) ◽  
Author(s):  
Akash Kumar ◽  
K. R. Balasubramaniam ◽  
Jiban Kangsabanik ◽  
Vikram ◽  
Aftab Alam
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Wide Band ◽  
Optoelectronic Properties ◽  
Structure Stability ◽  
Transparent Conductor ◽  
Wide Band Gap

scholarly journals Synthesis, optoelectronic properties and photovoltaic performances of wide band-gap copolymers based on dibenzosilole and quinoxaline units, rivals to P3HT

2016 ◽  
Vol 7 (25) ◽  
pp. 4160-4175 ◽  
Author(s):  
F. Caffy ◽  
N. Delbosc ◽  
P. Chávez ◽  
P. Lévêque ◽  
J. Faure-Vincent ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Bulk Heterojunction ◽  
Power Conversion ◽  
Wide Band ◽  
Optoelectronic Properties ◽  
Wide Band Gap ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells ◽  
Conversion Efficiencies

Dibenzosilole and quinoxaline based copolymers were synthesized and tested in bulk-heterojunction solar cells showing power conversion efficiencies up to 5.14%.

Crystal structure re-investigation in wide band gap CIGSe compounds

2009 ◽  
Vol 517 (7) ◽  
pp. 2145-2148 ◽  
Author(s):  
M. Souilah ◽  
X. Rocquefelte ◽  
A. Lafond ◽  
C. Guillot-Deudon ◽  
J.-P. Morniroli ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

Effect of Titanium Induced Chemical Inhomogeneity on Crystal Structure, Electronic Structure, and Optical Properties of Wide Band Gap Ga2O3

2020 ◽  
Vol 20 (3) ◽  
pp. 1422-1433 ◽  
Author(s):  
Mallesham Bandi ◽  
Vishal Zade ◽  
Swadipta Roy ◽  
Aruna N. Nair ◽  
Sierra Seacat ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Electronic Structure ◽  
Band Gap ◽  
Wide Band ◽  
Chemical Inhomogeneity ◽  
Wide Band Gap

Evidence for a modified-stannite crystal structure in wide band gap Cu-poor CuIn1−xGaxSe2: Impact on the optical properties

2008 ◽  
Vol 92 (24) ◽  
pp. 241923 ◽  
Author(s):  
M. Souilah ◽  
A. Lafond ◽  
N. Barreau ◽  
C. Guillot-Deudon ◽  
J. Kessler
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

scholarly journals Synthesis, crystal structure and spectroscopy studies of a new non-centrosymmetric organic cation nitrate

2014 ◽  
Vol 10 (3) ◽  
pp. 2532-2539 ◽  
Author(s):  
H. Saadouni ◽  
D. E. Janzen ◽  
M. Rzaigui ◽  
W.Smirani Sta
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Dielectric Material ◽  
Wide Band ◽  
Spectroscopic Studies ◽  
Hydrogen Atoms ◽  
Wide Band Gap ◽  
X Ray ◽  
Protonated Amine ◽  
Spectroscopy Studies

The synthesis, crystal structure and spectroscopic studies are reported for the salt m-anisidinium nitrate. A single-crystal  X-ray investigation has shown that this compound crystallizes in the non-centrosymmetric space group Cc with the lattice parameters: a = 5.744(3) Å, b = 14.968(6) Å, c = 10.178(4) Å; b  = 96.910(7)o; V = 868.6(6)Å3 ; Z = 4. The structure was solved from 1973 independent reflections with R1 = 0.033 and wR2 = 0.088. The hydrogen atoms of the protonated amine undergo hydrogen bonding interactions with oxygen atoms of three different nitrate anions forming 2-dimensional sheets. Solution NMR results are consistent with the X-ray structure. A measured optical band gap of 3.35eV indicates m-anisidinium nitrate is a wide-band-gap dielectric material.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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