Properties of a-SiC:H films and solar cells

2000 ◽  
Vol 77 (9) ◽  
pp. 699-704
Author(s):  
R Gharbi ◽  
M Fathallah ◽  
C F Pirri ◽  
E Tresso ◽  
G Crovini ◽  
...  
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Open Circuit Voltage ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Light Illumination ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Effect Of Light

a-SiC:H samples and solar cells were made by plasma-enhanced chemical vapor deposition (PECVD) using a multichamber deposition system. The effect of light illumination on samples prepared with and without hydrogen dilution was studied. The phototransport properties of the samples prepared with high hydrogen dilution were more stable versus time of illumination than non diluted ones.The samples were inserted as an intrinsic layer in semitransparent solar cells. The performance of solar cells depends on the energy gap and thickness of the intrinsic layer. High hydrogen dilution may increase the energy gap and act to decrease the structure uniformity. The results show that open circuit voltage Voc decreases with light illumination and depends on the doped p+ layer quality and created defects in the intrinsic layer. PACS Nos.: 70, 72, 40

Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition

2019 ◽  
Vol 114 (15) ◽  
pp. 153901 ◽  
Author(s):  
Shenghao Li ◽  
Manuel Pomaska ◽  
Jan Hoß ◽  
Jan Lossen ◽  
Frank Pennartz ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Hot Wire

Protocrystalline Si:H p-type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

2002 ◽  
Vol 715 ◽  
Author(s):  
R. J. Koval ◽  
Chi Chen ◽  
G. M. Ferreira ◽  
A. S. Ferlauto ◽  
J. M. Pearce ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Gas Flow ◽  
Open Circuit Voltage ◽  
Film Growth ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Single Step ◽  
Rf Plasma ◽  
Growth Regime

AbstractWe have revisited the issue of p-layer optimization for amorphous silicon (a-Si:H) solar cells, correlating spectroscopic ellipsometry (SE) measurements of the p-layer in the device configuration with light current-voltage (J-V) characteristics of the completed solar cell. Working with p-layer gas mixtures of H2/SiH4/BF3 in rf plasma-enhanced chemical vapor deposition (PECVD), we have found that the maximum open circuit voltage (Voc) for n-i-p solar cells is obtained using p-layers prepared with the maximum possible hydrogen-dilution gas-flow ratio R=[H2]/[SiH4], but without crossing the thickness-dependent transition from the a-Si:H growth regime into the mixed-phase amorphous + microcrystalline [(a+μc)-Si:H] regime for the ∼200 Å p-layers. As a result, optimum single-step p-layers are obtained under conditions similar to those applied for optimum i-layers, i.e., by operating in the so-called “protocrystalline” Si:H film growth regime. The remarkable dependence of the p-layer phase (amorphous vs. microcrystalline) and n-i-p solar cell Voc on the nature of the underlying i-layer surface also supports this conclusion.

Efficient 18 Å/s Solar Cells with All Silicon Layers Deposited by Hot-Wire Chemical Vapor Deposition

2000 ◽  
Vol 609 ◽  
Author(s):  
Qi Wang ◽  
Eugene Iwaniczko ◽  
Yueqin Xu ◽  
Wei Gao ◽  
Brent P. Nelson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Time ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Hot Wire ◽  
Edge Layer ◽  
Hydrogenated Amorphous ◽  
Sun Light

ABSTRACTEfficient hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes. On an untextured stainless steel (SS) substrate, an initial efficiency of 7.12% is reached, with a stable efficiency of 5.4% after 1000 hours 1 sun light soaking. This initial efficiency is reached by incorporating into the p/i interface about 60 Å of intrinsic a-Si:H “edge” material grown under conditions near the transition to microcrystallinity. This edge layer increases the cell's fill factor from 0.60 to 0.68 and the best open-circuit voltage is about 0.88 V. Using textured Ag/ZnOcoated SS supplied by United Solar Corporation, preliminary results of an all-HWCVD solar cell give an initial efficiency of 8.7 %.

scholarly journals Promising Shadow Masking Technique for the Deposition of High-Efficiency Amorphous Silicon Solar Cells Using Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 6 ◽  
Author(s):  
Kawtar Belrhiti Alaoui ◽  
Saida Laalioui ◽  
Badr Ikken ◽  
Abdelkader Outzourhit
Keyword(s):  
Refractive Index ◽  
Vapor Deposition ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit

In this work, a detailed description of the various steps involved in the fabrication of high-efficiency hydrogenated amorphous-silicon cells using plasma-enhanced chemical vapor deposition, and a novel shadow masking technique is presented. The influence of the different masking methods on the cell parameters was experimentally investigated. Particularly, the short-circuit current density (Jsc), the fill factor, the open circuit voltage (Voc), and the resistive losses indicated by the shunt (Rsh) and series (Rs) resistances were measured in order to assess the performance of the cells as a function of the masks used during the cell fabrication process. The results indicate that the use of a masking technique where the p-i-n structure was first deposited over the whole surface of a 20 cm2 × 20 cm2 substrate, followed by the deposition, deposits the back contact through a metal mask, and by the ultrasonic soldering of indium to access the front contact is a good alternative to laser scribing in the laboratory scale. Indeed, a record efficiency of 8.8%, with a short-circuit current density (Jsc) of 15.6 mA/cm2, an open-circuit voltage (Voc) of 0.8 V, and a fill factor of 66.07% and low resistive losses were obtained by this technique. Furthermore, a spectroscopic ellipsometry investigation of the uniformity of the film properties (thickness, band gap, and refractive index) on large-area substrates, which is crucial to mini-module fabrication on a single substrate and for heterojunction development, was performed using the optimal cell deposition recipes. It was found that the relative variations of the band gap, thickness, and refractive index n are less than 1% suggesting that the samples are uniform over the 20 cm2 × 20 cm2 substrate area used in this work.

Recombination in n-i-p (Substrate) a-Si:H Solar Cells with Silicon Carbide and Protocrystalline p-Layers

2003 ◽  
Vol 762 ◽  
Author(s):  
V. Vlahos ◽  
J. Deng ◽  
J.M. Pearce ◽  
R.J. Koval ◽  
G.M. Ferreira ◽  
...  
Keyword(s):  
Solar Cells ◽  
Forward Bias ◽  
Open Circuit ◽  
High Hydrogen ◽  
Beneficial Effects ◽  
Hydrogen Dilution ◽  
Cell Structures ◽  
Current Characteristics ◽  
Hydrogenated Amorphous

AbstractA study was carried out on hydrogenated amorphous silicon (a-Si:H) n-i-p (substrate) solar cell structures with p-a-SiC:H and highly diluted p-Si:H layers grown with different dilution ratios R=[H2]/[SiH4]. The contributions of the recombination at the p/i interfaces to the forward bias dark current characteristics were identified and quantified for the different cell structures. In both cell structures the role of the p/i interfaces was identified and it is found that the lowest p/i interface recombination is obtained with protocrystalline p-Si:H layers having no microcrystalline component. The results with p-Si:H layers are attributed not only to their properties but also to the subsurface modification of the intrinsic layer. Evidence is also presented that points to the beneficial effects of the high hydrogen dilution and power used in the deposition of these p-layers in creating the p/i interface regions. The limitations on 1 sun open circuit voltage (VOC) imposed by the p/i recombination present in all the cell structures is consistent with the mechanisms proposed by Deng et al.[1]. The results presented here also point to why the 1 sun VOC in protocrystalline p-Si:H solar cells is higher than that in p-a-SiC:H cells.

Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Transmission Electron

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

Nanostructure Control of Si and Ge Quantum Dots Based Solar Cells Using Plasma Processes

2014 ◽  
Vol 783-786 ◽  
pp. 2022-2027 ◽  
Author(s):  
Masaharu Shiratani ◽  
Giichiro Uchida ◽  
Hyun Woong Seo ◽  
Daiki Ichida ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Electrical Power ◽  
Chemical Vapor ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Si Nanoparticles ◽  
Sensitized Solar Cells

We report characteristics of quantum dot (QD) sensitized solar cells using Si nanoparticles and Ge nanoparticles. Si nanoparticles were synthesized by multi-hollow discharge plasma chemical vapor deposition, whereas Ge nanoparticles were done by a radio frequency magnetron sputtering using Ar+H2under high pressure conditions. The electrical power generation from Si QDs and Ge QDs was confirmed. Si QD sensitized solar cells show an efficiency of 0.024%, fill factor of 0.32, short-circuit current of 0.75 mA/cm2and open-circuit voltage of 0.10 V, while Ge QD sensitized solar cells show an efficiency of 0.036%, fill factor of 0.38, short-circuit current of 0.64 mA/cm2and open-circuit voltage of 0.15 V.

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