Low-frequency noise correlations in lateral pnp bipolar transistors

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1112-1117
Author(s):  
A. Nathan ◽  
E. Charbon ◽  
W. Kung ◽  
A. Salim

Measurement results of low-frequency noise behaviour, and in particular, the noise correlations in lateral pnp bipolar transistors are presented for various bias conditions in both forward active and saturation regimes. The correlation in output collector noise is very high with a value close to unity only when the device is in medium injection. At extremely high injection, the degree of coherence degrades, depicting a behaviour similar to the forward current gain of the device. This degradation can be attributed to emitter-crowding effects. The correlation in output noise can be exploited to drastically suppress the intrinsic noise, particularly at low frequencies, making such devices useful for the input stage of amplifiers; the first step towards realisation of ultra low-noise amplifiers in standard integrated circuit technology.

2004 ◽  
Vol 04 (02) ◽  
pp. L385-L402 ◽  
Author(s):  
C. CIOFI ◽  
G. GIUSI ◽  
G. SCANDURRA ◽  
B. NERI

Low Frequency Noise Measurements (LFNM) can be used as very sensitive tool for the characterization of the quality and the reliability of electron devices. However, especially in those cases in which the frequency range of interest extends below 1 Hz, instrumentation with an acceptable low level of background noise is not easily found on the market. In fact, at very low frequencies, the flicker noise introduced by the electronic components which make up the instrumentation becomes predominant and several interesting phenomena which could be detected by means of LFNM may result completely hidden in the background noise. This consideration is not limited to the case of input preamplifiers but does extend to any piece of instrumentation that contributes to the LFNM systems, and in particular to the power supplies used for biasing the Device Under Test. During the last few years, our research groups have been strongly involved in the design of very low noise instrumentation for application in the field of LFNM. In this work we report the main results which we have obtained together with a discussion of the design guidelines that have allowed us, in a few cases, to reach noise levels not to be equalled by any instrumentation available on the market.


Author(s):  
N. Broner ◽  
H.G. Leventhall

Over recent years, it has become apparent that low frequency noise annoyance is more widespread than originally believed. Annoyance has occurred where the emitted noise is unbalanced towards the low frequencies even though the dB(A) level has been low. Following laboratory experiments carried out as part of an investigation into low frequency annoyance, combined with field annoyance data, the Low Frequency Noise Rating (LFNR) curves are proposed for the assessment of low frequency noise annoyance complaints.


Sensors ◽  
2019 ◽  
Vol 19 (22) ◽  
pp. 4888
Author(s):  
Tao Wang ◽  
Chen Kang ◽  
Guozhi Chai

The purpose of this study was to measure the low-frequency noise and basic performance of a commercial magnetoimpedance (MI) sensor at sub-millihertz frequencies for use in space missions. Normally, space missions require measuring very weak magnetic fields with a long integration time, such as the space gravitational wave detection mission requiring sub-millihertz frequencies. We set up a platform for measuring the performance on this MI sensor, including low-frequency noise, measurement limit, linearity, and temperature stability. The results show that the low-frequency noise of the MI sensor is below 10 nT/√Hz at 1 mHz and below 100 nT/√Hz at 0.1 mHz; its measurement limit is 600 pT. The MI sensor is characterized by high precision, small size, and low noise, demonstrating considerable potential for application in magnetically sensitive experiments requiring long integration time. This is an effect way to solve the problem that there is on one suitable magnetic sensor at space magnetic field detection, but the sensor requires improvements in temperature stability.


2020 ◽  
Vol 69 (1) ◽  
pp. 194-200 ◽  
Author(s):  
Jean-Marc Routoure ◽  
Sheng Wu ◽  
Carlo Barone ◽  
Laurence Mechin ◽  
Bruno Guillet

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