Dépôt par laser de WSix sur du TiN à partir de WF6 et de SiH4

A direct writing system has been developed for the deposition of WSix on TiN from a gas mixture of WF6 and SiH4. An Ar+ (488 nm, 1.5 W) and a diode laser (796 nm, 1.0 W) are used as the photon source. Lines are written at scan speeds of up to 100 μm s−1 from a flowing gas mixture of WF6 and SiH4 diluted in Ar. Deposits of 1.5 to 11 μm wide and 20 to 180 nm thick are obtained at a writing speed of 100 μm s−1 with the Ar+ laser. Lines written using the diode laser are typically 4 to 12 μm wide and 160 to 860 nm thick. The W/Si ratio in the deposit is between 1.5–1.8 for a mixture of 1 sccm WF6 and 3 sccm SiH4 diluted in 50 to 150 sccm Ar.