Study on laser direct writing system for 32nm node

2009 ◽  
Author(s):  
Wenbo Jiang ◽  
Song Hu ◽  
Yong Yang ◽  
Lixin Zhao ◽  
Wei Yan ◽  
...  
Keyword(s):  
Writing System ◽  
Direct Writing ◽  
Laser Direct Writing

Compact Laser Direct Writing System

2014 ◽  
Vol 41 (10) ◽  
pp. 1016003
Author(s):  
胡永璐 Hu Yonglu ◽  
徐文东 Xu Wendong ◽  
王闯 Wang Chuang ◽  
赵成强 Zhao Chengqiang ◽  
刘涛 Liu Tao ◽  
...  
Keyword(s):  
Writing System ◽  
Direct Writing ◽  
Laser Direct Writing

Two-Dimensional Grating Fabrication Based on Ultra-Precision Laser Direct Writing System

2019 ◽  
Vol 39 (9) ◽  
pp. 0905001
Author(s):  
李民康 Minkang Li ◽  
向显嵩 Xiansong Xiang ◽  
周常河 Changhe Zhou ◽  
韦春龙 Chunlong Wei ◽  
贾伟 Wei Jia ◽  
...  
Keyword(s):  
Writing System ◽  
Two Dimensional ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Grating Fabrication ◽  
Ultra Precision

Laser-Assisted Low Temperature Deposition of WSix from WF6 and SiH4

1992 ◽  
Vol 282 ◽  
Author(s):  
R. Izquierdo ◽  
P. Desjardins ◽  
N. Elyaagoubi ◽  
M. Meunier
Keyword(s):  
Low Temperature ◽  
Diode Laser ◽  
Electron Spectroscopy ◽  
Adsorbed Layer ◽  
Gas Mixture ◽  
Writing System ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Low Temperature Deposition ◽  
Temperature Deposition

ABSTRACTA laser direct writing system has been developed for low temperature deposition of WSix on TiN from a gas mixture of WF6 and SiH4-. An Ar+ laser (488 nm, 1.5 W) and a diode laser (796 nm, 1.0 W) are used as photon sources. Lines are written at scan speeds of up to 100 μ/s from a flowing gas mixture of WF6 and SiH4 diluted in Ar. Lines 1.5 to 11 nm wide and 20 to 180 nmthick are obtained at a writing speed of 100 μ/s with the Ar+ laser. Lines written using the diode laser are typically 4 to 12 μm wide and 160 to 860 nm thick. W/Si ratio in the deposits, as measured by Auger electron spectroscopy (AES), isbetween 1.5 and 1.8.Surface analysis of the interaction of this gas mixture with the TiN surface without laser irradiation shows that W, Si and F are adsorbed on the surface when exposed simultaneously to WF6 and SiH4 producing an adsorbed layer where W/Si ratio is 1.3 and F/W ratio 1.7.

Diode Laser Induced Chemical Vapor Deposition of WSIx from WF6 and SiH4

1991 ◽  
Vol 236 ◽  
Author(s):  
P. Desjardins ◽  
R. Izquierdo ◽  
M. Meunier
Keyword(s):  
Diode Laser ◽  
Total Pressure ◽  
Limit Of Detection ◽  
Chemical Vapor ◽  
Gas Mixture ◽  
Writing System ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Laser Array ◽  
Reactive Gas

AbstractWe have developed a compact and inexpensive laser direct writing system, based on the 796 nm radiation of a 1 W diode laser array for the deposition of tungsten silicides. The laser power incident on TiN substrates varies between 50 and 550 mW. Lines are deposited from a gas mixture of WF6 and SiH4, whose total pressure is kept below 15 Torr to avoid uncontrolled reactions. Experiments are performed in a static reactor with WF6/SiH4 ratios varying from 0.2 to 10. Lines written at speeds ranging from 2 to 100 μm/s have typical thicknesses and widths varying from 30 to 1000 μm and from 4 to 15 μm respectively. Auger Electron Spectroscopy (AES) shows that no fluorine is incorporated in the WSix film, within the limit of detection. Moreover, no oxygen, carbon or nitrogen are detected in the bulk, although some surface contamination is present. From AES measurements, the W/Si ratio is estimated to be between 1.1 and 1.4 for a reactive gas mixture of WF6: SiH4 (1: 3).

The Design of Control Software for Laser Direct Writing System Based on DMD

Applied laser ◽  
2010 ◽  
Vol 30 (4) ◽  
pp. 357-360
Author(s):  
王国庆 Wang Guoqing ◽  
吴宾初 Wu Binchu ◽  
姜兆华 Jiang Zhaohua
Keyword(s):  
Writing System ◽  
Direct Writing ◽  
Laser Direct Writing ◽  
Control Software
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