Infrared emission from strained-Si1−xGex quantum wells

1991 ◽  
Vol 69 (3-4) ◽  
pp. 474-478 ◽  
Author(s):  
N. L. Rowell ◽  
J.-P. Noël ◽  
D. C. Houghton
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam ◽  
Infrared Emission ◽  
Photoluminescence Spectra ◽  
Strained Si ◽  
Peak Energy ◽  
Current Densities ◽  
Exciton Annihilation

Photoluminescence was observed for molecular beam epitaxy (MBE) grown Si1−xGex layers with 0.06 < x < 0.60. The spectrum was generally dominated by a ~80 meV wide peak centered ~120 meV below the strained Si1−xGex-alloy band gap, a peak which shifted consistently with Ge concentration. Electroluminescence with a peak energy of 860 meV was observed from a SiGe pin heterostructure grown by MBE and fabricated into mesa diodes. The electroluminescence persisted to temperatures up to 80 K with the diode forward biased at current densities as large as 50 A cm−2. Comparisons are made with the photoluminescence spectra of the same material and an estimate of quantum efficiency is given. A luminescence mechanism involving bound-exciton annihilation without phonon assistance is discussed.

Lateral band‐gap patterning and carrier confinement in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on nonplanar dot patterns

1992 ◽  
Vol 61 (7) ◽  
pp. 813-815 ◽  
Author(s):  
M. Krahl ◽  
E. Kapon ◽  
L. M. Schiavone ◽  
B. P. Van der Gaag ◽  
J. P. Harbison ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam ◽  
Lateral Band ◽  
Carrier Confinement

Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy

1992 ◽  
Vol 222 (1-2) ◽  
pp. 27-29 ◽  
Author(s):  
J. Brunner ◽  
U. Menczigar ◽  
M. Gail ◽  
E. Friess ◽  
G. Abstreiter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam

scholarly journals Влияние легирования барьерных слоев на эффективность фотолюминесценции напряженных гетероструктур InGaAlAs/InGaAs/InP

2018 ◽  
Vol 52 (9) ◽  
pp. 1034
Author(s):  
Е.С. Колодезный ◽  
А.С. Курочкин ◽  
С.С. Рочас ◽  
А.В. Бабичев ◽  
И.И. Новиков ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Active Region ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Nonradiative Recombination ◽  
Photoluminescence Spectra ◽  
Barrier Layers ◽  
P Type ◽  
Photoluminescence Efficiency

AbstractThe photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In_0.74Ga_0.26As quantum wells and δ-doped In_0.53Al_0.20Ga_0.27As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p -type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10^12 cm^–2 results in the suppression of nonradiative recombination.

Growth and Stability of Strained-Layer Multiple Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Shigeru Niki ◽  
Yunosuke Maktta ◽  
Akimasa Yamada ◽  
Junichi Shimada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Structural Disorder ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Spectra ◽  
Good Crystalline Quality

ABSTRACTThirty-period In0.28Ga0.72As(100Å)/GaAs (100Å) multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on (lOO)-oriented GaAs substrate with a 0.5μm-thick InyGa1-yAs (0≤y≤0.28) buffer layer interposed between the QW layer and the GaAs substrate. The MQWs with y close to the average InAs mole fraction of the QW layer exhibited good crystalline quality. It indicates that the strain is well-balanced between the GaAs and In0.28Ga0.72As layer. A significant change in their photoluminescence spectra has been observed when annealed above 750δC by means of rapid thermal annealing, implying a structural disorder in the QW“region.

Gas-Source Molecular Beam Epitaxy Growth and Characterization of GaNP/GaP Structures

2000 ◽  
Vol 618 ◽  
Author(s):  
H. P. Xin ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Conduction Band ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum ◽  
Gas Source ◽  
X Band ◽  
Peak Energy

ABSTRACTGaNP bulk layers with different N concentrations and GaN0.025P0.975/GaP multiple quantum wells (MQWs) with various well thicknesses were grown on (100) GaP substrates by gas-source molecular beam epitaxy with a RF nitrogen radical beam source. Using high-resolution X-ray rocking curves, photoluminescence (PL) and absorption measurements, we have shown that incorporation of N in GaNxP1−x, alloys (x ≥0.43%) leads to a direct bandgap behavior of GaNP, and yields strong room-temperature PL from the epilayers. A large Stokes shift of 200 meV is found between the PL peak energy and the absorption edge for the GaNP epilayers, indicating a very strong carrier localization. From the PL peaks of a series of GaN0.025P0.975/GaP MQWs with different well thicknesses grown at the same growth condition, a large conduction-band effective mass mc* − 0.9 me has been obtained for the GaN0.025P0.975alloy, indicating a mixing of Γ and X band wave functions in the conduction band

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Photoluminescence spectra of oxygen-doped ZnSe grown by molecular-beam epitaxy

1989 ◽  
Vol 39 (5) ◽  
pp. 3138-3144 ◽  
Author(s):  
Katsuhiro Akimoto ◽  
Takao Miyajima ◽  
Yoshifumi Mori
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra
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