Photoluminescence from pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy: Variation of the band gap with high pressure

1992 ◽  
Vol 10 (4) ◽  
pp. 2018 ◽  
Author(s):  
G. A. Northrop
Keyword(s):  
High Pressure ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam

Lateral band‐gap patterning and carrier confinement in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on nonplanar dot patterns

1992 ◽  
Vol 61 (7) ◽  
pp. 813-815 ◽  
Author(s):  
M. Krahl ◽  
E. Kapon ◽  
L. M. Schiavone ◽  
B. P. Van der Gaag ◽  
J. P. Harbison ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam ◽  
Lateral Band ◽  
Carrier Confinement

Band gap luminescence in pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy

1992 ◽  
Vol 222 (1-2) ◽  
pp. 27-29 ◽  
Author(s):  
J. Brunner ◽  
U. Menczigar ◽  
M. Gail ◽  
E. Friess ◽  
G. Abstreiter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam

Infrared emission from strained-Si1−xGex quantum wells

1991 ◽  
Vol 69 (3-4) ◽  
pp. 474-478 ◽  
Author(s):  
N. L. Rowell ◽  
J.-P. Noël ◽  
D. C. Houghton
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam ◽  
Infrared Emission ◽  
Photoluminescence Spectra ◽  
Strained Si ◽  
Peak Energy ◽  
Current Densities ◽  
Exciton Annihilation

Photoluminescence was observed for molecular beam epitaxy (MBE) grown Si1−xGex layers with 0.06 < x < 0.60. The spectrum was generally dominated by a ~80 meV wide peak centered ~120 meV below the strained Si1−xGex-alloy band gap, a peak which shifted consistently with Ge concentration. Electroluminescence with a peak energy of 860 meV was observed from a SiGe pin heterostructure grown by MBE and fabricated into mesa diodes. The electroluminescence persisted to temperatures up to 80 K with the diode forward biased at current densities as large as 50 A cm−2. Comparisons are made with the photoluminescence spectra of the same material and an estimate of quantum efficiency is given. A luminescence mechanism involving bound-exciton annihilation without phonon assistance is discussed.

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source
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