Epitaxy of Cd0.90Mn0.10Te for optoelectronic devices

1991 ◽  
Vol 69 (3-4) ◽  
pp. 270-273 ◽  
Author(s):  
J. J. Dubowski ◽  
J. R. Thompson ◽  
R. Benzaquen ◽  
A. P. Roth ◽  
Z. Wasilewski
Keyword(s):  
Optoelectronic Devices ◽  
Vapour Phase ◽  
High Energy ◽  
Laser Evaporation ◽  
Epitaxial Layers ◽  
Double Crystal ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Te Material

We report on pulsed laser evaporation and epitaxy (PLEE) of Cd0.90Mn0.10Te material that has potentials for application in optoelectronic devices operating in the wavelength range of 750–850 nm. Two lasers, Nd:YAG and excimer XeCl, are used to provide fluxes of atoms by laser ablation of high-purity polycrystalline targets. We demonstrate that the XeCl-laser-induced congruent vaporization of a multi-element solid target led to epitaxy of Cd0.90Mn0.10Te. The epitaxial layers were grown on (001) InSb and (001) Cd0.955Zn0.045Te substrates held at a temperature in the range of 200–240 °C. Structural characterization of the layers was carried out with in situ reflection high-energy electron diffraction, scanning electron microscopy, and double crystal X-ray diffraction. An excellent reproducibility of chemical composition of the PLEE-grown films has been demonstrated. Optical and structural properties of the films correspond to those of the best bulk Cd0.90Mn0.10Te or epitaxial layers grown by molecular beam epitaxy or metal organic vapour phase epitaxy.

Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy

1997 ◽  
Vol 159 (2) ◽  
pp. 543-557 ◽  
Author(s):  
G. P. Yablonskii ◽  
A. L. Gurskii ◽  
E. V. Lutsenko ◽  
I. P. Marko ◽  
H. Hamadeh ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Epitaxial Layers ◽  
Optically Pumped ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxy

1989 ◽  
Vol 67 (4) ◽  
pp. 330-338 ◽  
Author(s):  
P. Roth ◽  
M. A. Sacilotti ◽  
R. A. Masut ◽  
D. Morris ◽  
J. Young ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Large Strain ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
Vapour Phase Epitaxy ◽  
Substrate Orientation ◽  
Gaas Substrates ◽  
Metal Organic ◽  
Organic Vapour

The effect of substrate orientation on the optical properties of nonpseudomorphic InxGa1–xAs epitaxial layers grown by metal organic vapour-phase epitaxy has been investigated in two series of samples. Series (a) samples were grown on GaAs substrates cut 2° off (001) towards [Formula: see text], and those of series (b) were grown on GaAs substrates cut exactly on (001). The low-temperature photoluminescence spectra of the two series of samples differ drastically. Those of the (a) series are characteristic of highly uniform, fully relaxed ternary layers and are used to determine the composition dependence of the alloy band gap and of the carbon acceptor binding energy. In contrast, those of the (b) series are dominated by an intense, low-energy emission, which is attributed to exciton recombinations in small regions of small band gap. The reduction of the band gap is tentatively assigned to the presence of In-rich regions created by the large strain fields present along dislocations. The density of dislocations is much larger in the samples of the (b) series than in those of the (a) series owing to the combination of three-dimensional growth and slow strain relaxation for layers grown on (001) substrates.

ZnSe metal organic vapour-phase epitaxy on GaAs: substrate preparation as the limiting factor in ZnSe growth

1998 ◽  
Vol 184-185 ◽  
pp. 1338 ◽  
Author(s):  
D.N. Gnoth ◽  
T.L. Ng ◽  
I.B. Poole ◽  
D.A. Evans ◽  
N. Maung ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Vapour Phase ◽  
Limiting Factor ◽  
Substrate Preparation ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

Auto-épitaxie et propriétés d'As–Ga obtenu par épitaxie en phase vapeur à partir de composés organo-métalliques

1985 ◽  
Vol 63 (6) ◽  
pp. 732-735 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
J. Auclair
Keyword(s):  
Vapour Phase ◽  
Free Carrier ◽  
Variable Range Hopping ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Phase Vapeur ◽  
Extended States ◽  
Good Uniformity ◽  
Donor States

Lightly compensated epitactic n-type GaAs is obtained by metal-organic vapour-phase epitaxy (MOVPE) with free-carrier concentration in the low 1015 cm−3 range and with good uniformity of both thickness and impurity concentrations over a 2-in.-diameter area (1 in. = 2.54 cm). Detailed Hall-effect and photoluminescence measurements are reported. At temperatures below 8 K, the conductivity is governed by variable-range hopping, clearly indicating a band of localized donor states. At higher impurity concentrations, a metallic contribution to the conductivity suggests a buildup of extended states near the middle of this band. These results are consistent with the observed photoluminescence.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy

1994 ◽  
Vol 9 (11) ◽  
pp. 2073-2079 ◽  
Author(s):  
A Chergui ◽  
J Valenta ◽  
J L Loison ◽  
M Robino ◽  
I Pelant ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour
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