Characterization of ultrathin Ge epilayers on (100) Si

1991 ◽  
Vol 69 (3-4) ◽  
pp. 246-254 ◽  
Author(s):  
J. -M. Baribeau ◽  
D. J. Lockwood ◽  
T. E. Jackman ◽  
P. Aebi ◽  
T. Tyliszczak ◽  
...  

The understanding of the epitaxy of pure Ge layers on Si is an important step towards the synthesis of SimGen (m, n < 10 monolayers) short-period superlattices. The possibility of a direct band-gap character makes these structures extremely attractive. We have grown thin buried Gen ([Formula: see text] monolayers) films on (100) Si by molecular beam epitaxy and studied their structural properties by a variety of techniques including Raman scattering spectroscopy, glancing incidence X-ray reflection, Rutherford backscattering, transmission electron microscopy, and extended X-ray absorption fine structure analysis. All these techniques allowed detection of the thin Ge layers and provided information about the thickness, morphology, strain distribution, and interface sharpness of these heterostructures. The Ge„ films with [Formula: see text] had a two-dimensional nature and showed no sign of strain relaxation. Intermixing at the Si–Ge interfaces was present in all these films and estimated to be not more than two monolayers. This smearing at the interfaces may have contributed to the maintenance of that pseudomorphicity. A thicker Ge layer (n = 12) showed evidence of strain relaxation and clustering in three-dimensional islands.

1991 ◽  
Vol 220 ◽  
Author(s):  
P. Aebi ◽  
T. Tyliszczak ◽  
A. P. Hitchcock ◽  
J. -M. Baribeau ◽  
D. J. Lockwood ◽  
...  

ABSTRACTWe illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to determine the amount of interface mixing and strain condition in the study of (SimGen)p short-period superlattices. It is found that for n < 4, the number of Ge and Si nearest neighbours to Ge atoms is consistent with ∼25% interfacial mixing and that the Ge-Ge bond length corresponds to that of coherently strained Ge. The Si-Ge bond length is shorter, close to that of a strained Si0.25Ge0.75 alloy. For n > 4, the Ge-Ge bond length and the number of Si-Ge nearest neighbours increase significantly consistent with partial relaxation and interdiffusion. Raman scattering spectroscopy and x-ray reflectometry measurements are also presented and are consistent with the conclusions of the EXAFS analysis.


1994 ◽  
Vol 136 (1-4) ◽  
pp. 287-292 ◽  
Author(s):  
Teruo Mozume ◽  
Hideo Kashima ◽  
Kazuhiko Hosomi ◽  
Kiyoshi Ogata ◽  
Kazuhumi Suenaga ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Daisuke Ogawa ◽  
Ryo Kitaura ◽  
Takeshi Saito ◽  
Shinobu Aoyagi ◽  
Eiji Nishibori ◽  
...  

Thermally fragile tris(η5-cyclopentadienyl)erbium (ErCp3) molecules are encapsulated in single-wall carbon nanotubes (SWCNTs) with high yield. We realized the encapsulation of ErCp3with high filling ratio by using high quality SWCNTs at an optimized temperature under higher vacuum. Structure determination based on high-resolution transmission electron microscope observations together with the image simulations reveals the presence of almost free rotation of each ErCp3molecule in SWCNTs. The encapsulation is also confirmed by X-ray diffraction. Trivalent character of Er ions (i.e., Er3+) is confirmed by X-ray absorption spectrum.


Author(s):  
Anatoly Frenkel

We discuss methods of Extended X-ray Absorption Fine-Structure (EXAFS) analysis that provide three-dimensional structural characterization of metal nanoparticles, both mono- and bi-metallic. For the bimetallic alloys, we use short range order measurements to discriminate between random and non-random inter-particle distributions of atoms. We also discuss the application of EXAFS to heterogeneous nanoparticle systems.


1995 ◽  
Vol 399 ◽  
Author(s):  
M. Shima ◽  
L. Salamanca-Riba ◽  
G. Springholz ◽  
G. Bauer

ABSTRACTMolecular beam epitaxy was used to grow EuTe(x)/PbTe(y) short period superlattices with x=1-4 EuTe(111) monolayers alternating with y≈3x PbTe monolayers. The superlattices were characterized by transmission electron microscopy and high resolution x-ray diffraction. Regions with double periodicity were observed coexisting with areas of nominal periodicity. The sample with x=3.5 and y=9, for example, contains regions with double periodicity of x=7 and y=17. X-ray diffraction measurements confirm the formation of the double periodicity in these samples by the appearance of weak satellites in between the satellites of the nominal periodicity. The double periodicity in the superlattice is believed to result from interdiffusion during the growth. A model for this process is presented.


1996 ◽  
Vol 441 ◽  
Author(s):  
A. Yu. Khilko ◽  
R. N. Kyutt ◽  
G. N. Mosina ◽  
N. S. Sokolov ◽  
Yu. V. Shusterman ◽  
...  

AbstractEpitaxial CdF2 layers, which may be used in light-emitting devices integrated with silicon, were grown by Molecular Beam Epitaxy (MBE). Characterization of the layers by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) showed that optimal growth temperature lies in the range 60–80°C. The sticking coefficient of CdF2 molecules was found to decrease at temperatures above 100°C. Different modes of misfit strain relaxation were observed above and below that temperature.


2019 ◽  
Vol 37 (3) ◽  
pp. 347-352
Author(s):  
A. H. Moharram

AbstractCopper oxide and cobalt oxide (Co3O4, CuO) nanocrystals (NCs) have been successfully prepared using microwave irradiation. The obtained powders of the nanocrystals (NCs) were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermogravimetric (TGA) analysis and Fourier-transform infrared spectroscopy. The obtained results confirm the presence of both nanooxides which have been produced during chemical precipitation using microwave irradiation. TEM micrographs have shown that the obtained nanocrystals are characterized by high dispersion and narrow size distribution. The results of X-ray diffraction confirmed those obtained from the transmission electron microscope. Optical absorption analysis indicated the direct band gap for both kinds of the nanocrystals.


2003 ◽  
Vol 91 (10) ◽  
Author(s):  
Mohamed Merroun ◽  
C. Hennig ◽  
A. Rossberg ◽  
T. Reich ◽  
S. Selenska-Pobell

SummaryWe used a combination of Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy, Transmission Electron Microscopy (TEM) and Energy-Dispersive X-ray (EDX) analysis to conduct molecular scale studies on U(VI) interaction with three recently described eco-types of


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