Photocorrosion of hydrogenated amorphous silicon: effect of the solvent

1989 ◽  
Vol 67 (10) ◽  
pp. 980-983
Author(s):  
O. Savadogo ◽  
A. Yelon
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Ac Impedance ◽  
Corrosion Process ◽  
Oxide Growth ◽  
Frequency Range ◽  
Impedance Measurements ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Hydrogenated Amorphous

The photocorrosion of amorphous hydrogenated silicon (a-Si:H) in different solvents was studied. Impedance measurements were performed under potentiostatic conditions. At each potential, the impedance Z(ω, V) was determined in the frequency range 5 Hz–100 kHz. The Z(ω, V) diagrams were analyzed and the corrosion sensitivity of the material in different electrolytes was determined. A correlation between electroactivity domain and ac impedance curves is proposed. A relationship is used to describe the anodic corrosion process in different solvents. The electrolyte that shows no oxide growth at the semiconductor – electrolyte interface was deduced.

PREPARATION AND CHARACTERIZATION OF GRADED BANDGAP AMORPHOUS HYDROGENATED SILICON-SULFUR THIN FILMS

1992 ◽  
Vol 06 (08) ◽  
pp. 469-475
Author(s):  
M. HAMMAM
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Graded Layers ◽  
Rf Glow Discharge ◽  
Optical Bandgaps ◽  
Silicon Based ◽  
Hydrogenated Amorphous ◽  
Graded Bandgap

Compositionally graded hydrogenated amorphous silicon-sulfur alloys ( a-Si 1−x S x: H ) were grown by RF glow discharge decomposition of silane and hydrogen sulfide gases. Infrared spectra show clear evidence for the incorporation of sulfur in the form of Si-S bonds in the material. The graded bandgap films possess optical bandgaps ranging from 1.91 to 2.05 eV depending on the RF power. The compositionally graded layers display high photosensitivities indicating that they may be ideal candidates for use in amorphous silicon based tandem cells.

1 / f Noise in Hydrogenated Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
C. Parman ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Power Law ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Current Fluctuations ◽  
Surprising Result ◽  
Frequency Range ◽  
Temperature Dependent ◽  
Power Law Exponent ◽  
Hydrogenated Amorphous

ABSTRACTMeasurements of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the spectral density of the noise accurately obeys a 1/f frequency dependence over the frequency range of 1 Hz to 1 kHz for temperatures ranging from room temperature to 450K. The noise displays a power law dependence on the d.c. curent passing through the sample, with a temperature dependent power law exponent. In addition, the resistance of the a-Si:H as a function of time displays switching phenomena; a surprising result given the effective volume ( ∼10-6 cm3) of the sample.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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