A study of hydrogen diffusion in crystalline silicon by secondary-ion mass spectrometry

1989 ◽  
Vol 67 (4) ◽  
pp. 379-383 ◽  
Author(s):  
B. Y. Tong ◽  
X. W. Wu ◽  
G. R. Yang ◽  
S. K. Wong
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Mass Spectroscopy ◽  
Hydrogen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Nuclear Resonance ◽  
Secondary Ion Mass Spectroscopy ◽  
Flux Model ◽  
Secondary Ion

The diffusion coefficient of hydrogen in crystalline silicon, obtained from recent profiling experiments such as nuclear resonance retention and secondary-ion mass spectroscopy, is 3–9 orders of magnitude smaller than the previously accepted value measured by Van Wieringen and Warmoltz in 1956. Here we point out several items often overlooked in the analysis of profiling measurements. A limited flux model is proposed to explain the observed results. Predictions by the model are supported by further experiments.

Te Induced AlAs/GaAs Superlattice Mixing

1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Temperature Range ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

Redistribution of Implanted Hydrogen in p+ GaAs(Zn) and n+ GaAs(Si) Crystais

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Nova ◽  
A. R. Von Neida ◽  
S. J. Pearton
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Electronic Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Gaas Wafer ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTIn order to gain a better understanding of hydrogen in GaAs crystals, a Zn doped p+ GaAs wafer has been implanted with 300 keV protons (H) to a fluence of 1E16/ain and portions of the wafer have been furnace annealed at temperatures up to 600°C. The implanted H and the dopant Zn atomr were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the H redistributes itself in the p+ GaAs(Zn) in much the same manner as it does in n+ GaAs(Si). Movement of the implanted H begins with annealing at 200°C and proceeds rapidly with higher temperatures. However, based on the SIMS profiles, the diffusion coefficient for the H diffusing into the undamaged p+ GaAs(Zn) crystal appears to be considerably higher than that of H into n+ GaAs(Si). Electronic properties of the inplanted and annealed p+ GaAs samples have also been examined and correlated with the SINE profiles.

DEPTH-DEPENDENT MIXING OF AN AlAs-GaAs SUPERLATTICE BY ION IMPLANTATION

1985 ◽  
Vol 56 ◽  
Author(s):  
S.A. SCHWARZ ◽  
T. VENKATESAN ◽  
R. BHAT ◽  
M. KOZA ◽  
H.W. YOON ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Mixing Effect ◽  
Thermal Mixing ◽  
Projected Range ◽  
Ion Mass Spectrometry ◽  
Before And After ◽  
Secondary Ion

AbstractThe effects of implantation and annealing on an AlAs-GaAs superlattice grown by OMCVD is examined with SIMS (secondary ion mass spectrometry). Several 180 keV 28Si+ implants, with doses ranging from 3 × 1013 to 3 × 1015 cm−2, are examined before and after a three hour 850 C anneal. While the implantation by itself causes some intermixing in the vicinity of the projected range, the 850 C thermal anneal induces significant mixing at depths well beyond the implant range. In the region of maximum implant damage, however, the post-thermal mixing effect is inhibited. Depth dependent diffusion lengths of Al and Si are derived from the SIMS data. The diffusion coefficient of Si is markedly enhanced in the mixed regions.

SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers

1995 ◽  
Vol 386 ◽  
Author(s):  
Stephen P. Smith ◽  
Larry Wang ◽  
Jon W. Erickson ◽  
Victor K. F. Chia
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectroscopy ◽  
Metal Contamination ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Industry ◽  
Silicon Wafers ◽  
Analytical Technique ◽  
Surface Metal ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy (SIMS) coupled with oxygen flooding of the silicon surface during analysis provides an analytical technique capable of detecting ≤1010 atoms/cm2 of many surface elemental contaminants. Of particular importance to meet the future needs of the semiconductor industry is the current ability to detect Al and Fe contamination at a level of 2×109 atoms/cm2.

Mechanism of Enhanced Diffusion of Aluminum in 6H-SiC in the Process of High-Temperature Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
Igor O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficient ◽  
High Temperature ◽  
Ion Implantation ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Enhanced Diffusion ◽  
Sic Wafer ◽  
Secondary Ion

ABSTRACTThe diffusion of Al in 6H-SiC during high-temperature ion implantation was studied using secondary ion mass spectrometry. A 6H-SiC wafer was implanted with 50 keV Al ions to a dose of 1.4E16 cm−2 in the high temperature range 1300°–1800TC and at room temperature. There are two diffusion regions that can be identified in the Al profiles. At high Al concentrations the gettering related peak and profile broadening are observed. At low Al concentrations, the profiles have a sharp kink and deep penetrating diffusion tails. In the first region, the diffusion coefficient is temperature independent, while in the second it exponentially increases as a function of temperature. The Al redistribution can be explained with the substitutional-interstitial diffusion mechanism.

Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

2004 ◽  
Vol 810 ◽  
Author(s):  
Lilya Ihaddadene-Lecoq ◽  
Jerome Marcon ◽  
Kaouther Ketata
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Boron Difluoride ◽  
Secondary Ion ◽  
Trap Interstitial

ABSTRACTWe have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Diffusion of Hydrogen in 6H Silicon Carbide

1996 ◽  
Vol 423 ◽  
Author(s):  
M. K. Linnarsson ◽  
J. P. Doyle ◽  
B. G. Svensson
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Silicon Carbide ◽  
Diffusion Coefficient ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Defect Complexes ◽  
Induced Defects ◽  
Secondary Ion ◽  
Diffusion Of Hydrogen

Abstract6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 °C and 1150 °C. Using depth profiling by secondary ion mass spectrometry motion of hydrogen is observed in the implanted region for temperatures above 700 °C. A diffusion coefficient of ∼10−14 cm2/s is extracted at 800°C with an approximate activation energy of ∼3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900°C and are tentatively identified as Carbon-Hydrogen centers at a Si vacancy.

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