Crystal growth of CuInSe2 by the Bridgman method

1989 ◽  
Vol 67 (4) ◽  
pp. 294-297 ◽  
Author(s):  
W. S. Weng ◽  
L. S. Yip ◽  
I. Shih ◽  
C. H. Champness
Keyword(s):  
Crystal Growth ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Bridgman Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Hall Effect Measurements ◽  
Rotation Technique ◽  
Crucible Rotation

Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose. An accelerated crucible-rotation technique was employed for a better mixing of the melt during the growth. Void- and crack-free crystal grains with an area as large as 50 mm2 and a thickness of more than 5 mm could be selectively cut from the ingots. From room-temperature Hall-effect measurements, mobility values as large as 73 cm2 ∙ V−1 ∙ s−1 were obtained for the present samples. X-ray diffraction studies suggested that abrasive polishing might create an amorphous layer on the surface of the CuInSe2 crystals.

Thermoelectric Properties of Pb1-xCdxSe Crystals Grown by Vertical Bridgman Method

2012 ◽  
Vol 194 ◽  
pp. 148-152
Author(s):  
Horng Jyh Gau ◽  
Yih Jye Chiou ◽  
Ching Cherng Wu ◽  
Yung Kang Kuo ◽  
Ching Hwa Ho
Keyword(s):  
Figure Of Merit ◽  
Carrier Transport ◽  
Sem Analysis ◽  
Bridgman Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman Method ◽  
Temperature Dependences ◽  
Type Semiconductor ◽  
Vertical Bridgman

Single crystals of Pb1-xCdxSe compounds with x = 0, 0.01, 0.03, 0.05, 0.07 and 0.1 were grown by vertical Bridgman method. The crystalline phase and stochiometry for these crystals were investigated by X-ray diffraction, SEM and electron-probe microanalysis (EPMA). The thermoelectric behaviors for the Pb1-xCdxSe crystals were studied by means of thermal and carrier transport measurements in the temperature range between 50K and 400K. X-ray diffraction and SEM analysis confirmed that as-grown Pb1-xCdxSe crystals are simgle phase. The experimental results showed that the PbTe sample is p-type semiconductor but Pb1-xCdxSe samples with x = 0.01, 0.03, 0.05, 0.07 and 0.1 are n-type semiconductors. Temperature dependences of resistivity, Seebeck coefficient, and thermal conductivity for the various compositions of Pb1-xCdxSe were analyzed. The dimensionless thermoelectric figure of merit ZT for these compounds was evaluated and discussed. It was found that Pb0.95Cd0.05Se exhibits the best thermoelectric performance. The maximum figure of merit (ZT) of Pb0.95Cd0.05Se is about 0.47 at 290 K.

scholarly journals Trinodal Self-Penetrating Nets from Reactions of 1,4-Bis(alkoxy)-2,5-bis(3,2’:6’,3’’-terpyridin-4’-yl)benzene Ligands with Cobalt(II) Thiocyanate

Crystals ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 529 ◽  
Author(s):  
Giacomo Manfroni ◽  
Alessandro Prescimone ◽  
Stuart R. Batten ◽  
Y. Maximilian Klein ◽  
Dariusz J. Gawryluk ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Crystal Growth ◽  
Single Crystal ◽  
Crystal Lattice ◽  
1H Nmr ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray

The tetratopic ligands 1,4-bis(2-ethylbutoxy)-2,5-bis(3,2’:6’,3’’-terpyridin-4’-yl)benzene (1) and 1,4-bis(3-methylbutoxy)-2,5-bis(3,2’:6’,3’’-terpyridin-4’-yl)benzene (2) have been prepared and characterized by 1H and 13C{1H} NMR, IR, and absorption spectroscopies and mass spectrometry. Reactions of 1 and 2 with cobalt(II) thiocyanate under conditions of crystal growth at room temperature result in the formation of [{Co(1)(NCS)2}·MeOH·3CHCl3]n and [{Co(2)(NCS)2}·0.8MeOH·1.8CHCl3]n. Single-crystal X-ray diffraction reveals that each crystal lattice consists of a trinodal self-penetrating (62.84)(64.82)(65.8)2 net. The nodes are defined by two independent cobalt centres and the centroids of two crystallographically independent ligands which are topologically equivalent.

Die Kristall- und Molekülstruktur von Tris(dimethylamino)boran / The Crystal and Molecular Structure of Tris(dimethylamino)borane

1982 ◽  
Vol 37 (10) ◽  
pp. 1230-1233 ◽  
Author(s):  
Günter Schmid ◽  
Roland Boese ◽  
Dieter Bläser
Keyword(s):  
Molecular Structure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Crystal And Molecular Structure ◽  
Melting Process ◽  
Single Crystal Growth ◽  
Zone Melting ◽  
X Ray Diffraction ◽  
X Ray

Abstract Tris(dimethylamino)borane, X-ray The crystal and molecular structure of tris(dimethylamino)borane, a liquid at room temperature, has been determined by single-crystal X-ray diffraction methods at - 116°C. The single-crystal growth was accomplished by means of a miniature zone melting process on the diffractometer. The structure data are compared with those of other aminoboranes.

Single Crystal Growth and Thermoelectric Properties of Ce5Cu19P12

1998 ◽  
Vol 545 ◽  
Author(s):  
K. J. Proctor ◽  
F. J. DiSalvo
Keyword(s):  
Electrical Resistivity ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Single Crystal Growth ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Temperature Resistivity

AbstractSingle crystals of the known ternary cerium intermetallic Ce5Cu19P12were grown by Sn flux and I2transport methods. The long axis of the black hexagonal needles was confirmed to be the c-axis by single crystal X-ray diffraction. Electrical resistivity of both single crystals and a pressed pellet was measured from 4 - 300 K; the room temperature resistivity is about 400 μΩ-cm for the needle axis of the crystals and about 5 mΩ-cm for the pressed pellet. The thermopower of the pressed pellet was found to be 34 μV/K at room temperature.

scholarly journals Straight Versus Branched Chain Substituents in 4′-(Butoxyphenyl)-3,2′:6′,3″-terpyridines: Effects on (4,4) Coordination Network Assemblies

Polymers ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 1823
Author(s):  
Dalila Rocco ◽  
Alessandro Prescimone ◽  
Edwin C. Constable ◽  
Catherine E. Housecroft
Keyword(s):  
Crystal Growth ◽  
Conformational Changes ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Straight Chain ◽  
X Ray ◽  
Spatial Properties ◽  
Branched Chain ◽  
Branched Chains

The preparation and characterization of the isomers rac-4′-(4-butan-2-yloxyphenyl)-3,2′:6′,3″-terpyridine (rac-2), 4′-(2-methylpropoxyphenyl)-3,2′:6′,3″-terpyridine (3) and 4′-(tert-butoxyphenyl)-3,2′:6′,3″-terpyridine (4) are reported. The compounds react with Co(NCS)2 under conditions of crystal growth at room temperature to give single crystals of [{Co(rac-2)2(NCS)2}·CHCl3]n, [Co(3)2(NCS)2]n and [{Co(4)2(NCS)2}·CHCl3]n which possess (4,4) networks, with the Co centers acting as 4-connecting nodes. Powder X-ray diffraction (PXRD) was used to confirm that the crystals chosen for single crystal X-ray diffraction were representative of the bulk samples. The detailed structures of the three networks have been compared with that of the previously reported [{Co(1)2(NCS)2}·4CHCl3]n in which 1 is 4′-(butoxyphenyl)-3,2′:6′,3″-terpyridine. Whereas the switch from 1 with the straight-chain butoxy substituent to rac-2, 3 and 4 with branched chains causes significant structural perturbation, changes in the spatial properties of the branched substituents are accommodated with subtle conformational changes in the 3,2′:6′,3″-tpy domain.

Solid State Amorphization in the Interfacial Reactions of Yttrium Thin Films on (111)Si

1993 ◽  
Vol 311 ◽  
Author(s):  
T.T. Lee ◽  
L.L. Chen
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Interfacial Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
State Amorphization ◽  
Amorphous Interlayer

ABSTRACTInterfacial reactions of ultrahigh vacuum deposited yttrium thin films on atomically clean (111)Si at low temperatures have been studied by both conventional and high resolution transmission electron microscopy, Auger electron spectroscopy and x-ray diffraction. A 10–nm–thick yttrium thin film, deposited onto (lll)Si at room temperature, was found to completely intermix with Si to form an 11–nm–thick amorphous interlayer. Crystalline Y5Si3 and Si were observed to nucleate first within the amorphous interlayer in samples annealed at temperatures lower than 200 °C. Epitaxial YSi2−x was found to be the only phase formed at the interface of amorphous interlayer and crystalline Si in samples annealed at temperatures higher than 250 °C. In as deposited 20– to 60–nm thick Y thin films on silicon samples, crystalline Y5Si3, Si, and YSi and a 2.5–nm–thick amorphous layer were found to be present simultaneously.

Influence of the structure on the mechanical properties of electrodeposited metallic thin films

1993 ◽  
Vol 308 ◽  
Author(s):  
J.-L. Delplancke ◽  
R. Winand ◽  
J. Dille ◽  
J. Charlier
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Crystal Growth ◽  
Work Hardening ◽  
Room Temperature ◽  
Ageing Process ◽  
Metallic Thin Films ◽  
X Ray Diffraction ◽  
Stress Strain ◽  
X Ray

ABSTRACTProduction of thin (10 to 200 microns thick) metallic (Cu, Co and Ni-P) foils is performed by electrodeposition on various substrates. A competition between substrate-induced and electroplating-induced inhibition of crystal growth appears. Film structures observed by SEM, TEM and X-Ray diffraction are related to the mechanical properties of the films (stress-strain curves, microhardness and work hardening bend test).In some cases, copper thin films with a large number of submicron crystals are obtained. These films recrystallize at room temperature and their mechanical properties are completely modified by this ageing process.

Heavily Doped Polycrystalline 3C-SiC Growth on SiO2/Si (100) Substrates for Resonator Applications

2007 ◽  
Vol 556-557 ◽  
pp. 179-182 ◽  
Author(s):  
Guo Sheng Sun ◽  
Jin Ning ◽  
Xing Fang Liu ◽  
Yong Mei Zhao ◽  
Jia Ye Li ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nitrogen Doped ◽  
Hall Effect Measurements ◽  
Heavily Doped ◽  
Sic Films

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 μm-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 ⋅cm, 54 cm2/Vs, and 2.0×1017 cm-3, respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10-3 ⋅cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 μm. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

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