Deep-level transient spectroscopic investigation of the EL2 deep-level in metalorganic chemical vapour deposited Ga1−xInxAs epilayers

1989 ◽  
Vol 67 (4) ◽  
pp. 283-286 ◽  
Author(s):  
R. V. Lang ◽  
J. D. Leslie ◽  
J. B. Webb ◽  
A. P. Roth ◽  
M. A. Sacilotti ◽  
...  
Keyword(s):  
Activation Energy ◽  
Thermal Activation ◽  
Deep Level ◽  
Chemical Vapour ◽  
Indium Content ◽  
Thermal Activation Energy ◽  
Transient Spectroscopy ◽  
Level Property ◽  
Metalorganic Chemical ◽  
Deposition Conditions

The thermal activation energy of the EL2 deep level in low-pressure metalorganic chemical vapour deposited Ga1−xInxAs epilayers has been determined by deep-level transient spectroscopy. Variation of the deposition conditions, which included a change in the substrate orientation, resulted in different dependencies of the EL2 thermal activation energy upon the epilayer indium content. In all cases a decrease in this deep-level property was observed for increasing indium content in the epilayers. Although the cause of this variation in the dependence of the thermal activation energy upon the epilayer indium content could not be identified in this work, it can be shown that it is not associated with different amounts of residual strain or impurities in the epilayers.

Evidence for Metastabile State of DX Center in AxGa1-xAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Subhasis Ghosh ◽  
Vikram Kumar
Keyword(s):  
Activation Energy ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Deep Level ◽  
Thermal Activation Energy ◽  
Dx Centers ◽  
Dx Center ◽  
Transient Spectroscopy ◽  
Silicon Doped ◽  
First Time

ABSTRACTPhoto-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.

Characterization of Deep Levels in 3C-SiC by Optical-Capacitance-Transient Spectroscopy

2002 ◽  
Vol 719 ◽  
Author(s):  
Y. Nakakura ◽  
M. Kato ◽  
M. Ichimura ◽  
E. Arai ◽  
Y. Tokuda
Keyword(s):  
Cross Section ◽  
Thermal Activation ◽  
Deep Level ◽  
Threshold Energy ◽  
Thermal Activation Energy ◽  
Deep Levels ◽  
Optical Cross Section ◽  
Transient Spectroscopy ◽  
Capacitance Transient

AbstractAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize the defects in 3C-SiC on Si. The O-CTS measurement enables us to estimate optical threshold energy and optical cross section for the defects. In the O-CTS spectrum, a peak was observed for photon energy hv larger than 0.5 eV. This peak was thought to be due to the ND1 center, which was also observed by deep level transient spectroscopy (DLTS) and found to have a thermal activation energy of 0.37 eV. The optical cross section for the center increased with hv for hv<0.6 eV and then decreased with increasing hv. The apparent optical threshold energy was about 0.47 eV. Another deep levels which have optical threshold energy of around 1.4 eV were also observed.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

Sign in / Sign up

Export Citation Format

Share Document