High resolution electron microscopy characterization of interfaces in group III–V semiconductors
Keyword(s):
The technique and application of high resolution electron microscopy (HREM) to the study of group III–V semiconductor multilayers is described. The theory of HREM contrast is briefly reviewed, emphasizing the need to bear in mind resolution and information limits to which the images may be interpreted. The role of image simulations in this interpretation is stressed. Examples are given of the application of HREM to the study of the morphology and chemical abruptness of GaInAs–AlInAs interfaces and the defect structure at GaSb–GaAs strained interfaces.
2011 ◽
Vol 62
(4)
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pp. 438-441
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2016 ◽
Vol 307
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pp. 428-435
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1994 ◽
Vol 52
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pp. 756-757