High resolution electron microscopy characterization of interfaces in group III–V semiconductors

1989 ◽  
Vol 67 (4) ◽  
pp. 262-267 ◽  
Author(s):  
R. E. Mallard

The technique and application of high resolution electron microscopy (HREM) to the study of group III–V semiconductor multilayers is described. The theory of HREM contrast is briefly reviewed, emphasizing the need to bear in mind resolution and information limits to which the images may be interpreted. The role of image simulations in this interpretation is stressed. Examples are given of the application of HREM to the study of the morphology and chemical abruptness of GaInAs–AlInAs interfaces and the defect structure at GaSb–GaAs strained interfaces.

Author(s):  
Y.-M. Pan ◽  
P. P. Paul ◽  
S. T. Schwab

Titanium aluminides are a class of intermetallics whose application to a variety of advanced structures may yield substantial improvements in system performance. Before titanium aluminides can realize their full potential, a number of deficiencies such as lack of ductility must be overcome through improved processing. Difficulties inherent in traditional methods have prompted the development of the ultrastructure approach to materials processing. Chemical processing has best potential for ultrastructure control because articles are constructed from atomic level up. The availability of nanostructured materials may be essential to the development of intermetallics with acceptable levels of ductility. The focus of this work is to use high resolution electron microscopy (HREM) techniques to characterize the structure and chemistry of the chemically-derived, nanocrystalline intermetallic powders that have potential to enable ultrastructure processing of advanced intermetallics and alloys.In an attempt to produce salt-free TiAl3, a dilute hexane solution of Ti[N(SiMe3)2]3 was combined with an excess of (AIH3) at room temperature to yield a very fine, steel-gray powder.


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