Influence of surface effects on the sensitivity of magnetic-field sensors

1989 ◽  
Vol 67 (4) ◽  
pp. 207-211 ◽  
Author(s):  
LJ. Ristić ◽  
T. Q. Truong ◽  
M. Doan ◽  
D. Mladenovic ◽  
H. P. Baltes
Keyword(s):  
Magnetic Field ◽  
Comparative Study ◽  
Gate Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Surface Effects ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Magnetic Field Sensors

A comparative study of the role of surface effects in the sensitivity of lateral magnetotransistors and magnetodiodes is presented. The surface potential at the Si–SiO2 interface is changed by means of the gate voltage. Both types of devices are realized in standard complementary metal oxide semiconductor technology. The results indicate that improvement of the sensitivity can be achieved in both cases, but the dependence of sensitivity of magnetotransistor on surface effects is much lower than that of magnetodiode.

scholarly journals Atomic-scale structure and chemical sensing application of ultrasmall size-selected Pt nanoparticles supported on SnO2

2020 ◽  
Vol 1 (9) ◽  
pp. 3200-3207
Author(s):  
Stephan Steinhauer ◽  
Eva Lackner ◽  
Florentyna Sosada-Ludwikowska ◽  
Vidyadhar Singh ◽  
Johanna Krainer ◽  
...  
Keyword(s):  
Carbon Monoxide ◽  
Chemical Sensing ◽  
Pt Nanoparticles ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Atomic Scale ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Sensing Application ◽  
Chemoresistive Sensors

SnO2-based chemoresistive sensors integrated in complementary metal-oxide-semiconductor technology were functionalized with ultrasmall Pt nanoparticles, resulting in carbon monoxide sensing properties with minimized humidity interference.

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

Experimental Basis and Design of a New Cochlear Prosthesis System

1987 ◽  
Vol 96 (1_suppl) ◽  
pp. 76-79
Author(s):  
J. Génin ◽  
R. Charachon
Keyword(s):  
Theoretical Model ◽  
Integrated Circuits ◽  
Cochlear Implant ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Experimental Basis ◽  
Cochlear Prosthesis

In a multichannel cochlear prosthesis, electrical interactions between electrodes impose severe limitations on dynamic range and selectivity. We present a theoretical model to cope with these limitations. Building a successful cochlear implant requires full custom-integrated circuits. We present the design of such a device, implemented in complementary metal oxide semiconductor technology. The area of the chip is 9 mm2 and it can stimulate 15 cochlear electrodes with current impulses.

Magnetotransistors sensitive to a magnetic field applied in two different directions

1991 ◽  
Vol 69 (3-4) ◽  
pp. 170-173
Author(s):  
M. Doan ◽  
Lj. Ristic
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Basic Principle ◽  
Magnetic Induction ◽  
Linear Response ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Base Region ◽  
Semiconductor Process

A lateral magnetotransistor that is sensitive to a magnetic field applied either parallel or perpendicular to the chip's surface is reported. It is fabricated using the standard complementary metal oxide semiconductor process. The deflection of the carriers in the base region is considered as the basic principle of operation. The device shows a linear response to a magnetic field in both directions. The minimum magnetic induction to be detected is in the order of 10 μT at f = 1 kHz.

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