Micromachined vertical hall magnetic field sensor in standard complementary metal oxide semiconductor technology

1992 ◽  
Vol 60 (25) ◽  
pp. 3188-3190 ◽  
Author(s):  
M. Paranjape ◽  
Lj. Ristic
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Magnetic Field Sensor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Field Sensor

An Integrated Pressure and Magnetic Field Sensor Based on Piezoresistance Effect

2015 ◽  
Vol 645-646 ◽  
pp. 610-615
Author(s):  
Tong Wu ◽  
Xiao Feng Zhao ◽  
Xiang Hong Yang ◽  
Dian Zhong Wen ◽  
Gang Li
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
External Pressure ◽  
Metal Oxide Semiconductor ◽  
Magnetic Field Sensor ◽  
Oxide Semiconductor ◽  
Field Sensor

An integrated pressure and magnetic field sensor based on piezoresistance effect is proposedin this paper. The integrated sensor is composed of a C-type silicon cup, ferromagnetic materialand Wheatstone bridge constructed by four metal oxide semiconductor field effect transistors(MOSFETs) channel resistances as piezoresistances. Based on the piezoresistance effect of channelresistances, the measurement to the external pressure P and magnetic field B can be achieved by thesensor. Through using complementary metal oxide semiconductor (CMOS) technology and microelectromechnicalsystem (MEMS) technology, the sensor chip was designed and fabricated on <100>orientation silicon substrates, locating the ferromagnetic material on its squared silicon membranecenter. The experimental results show that when supply voltage of the sensor is 2.0 V, the pressuresensitivity of sensor is 0.39 mV/kPa (B=0 T), and the magnetic field sensitivity of sensor is 1.48 mV/T(P=0 kPa).

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

Magnetotransistors sensitive to a magnetic field applied in two different directions

1991 ◽  
Vol 69 (3-4) ◽  
pp. 170-173
Author(s):  
M. Doan ◽  
Lj. Ristic
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Basic Principle ◽  
Magnetic Induction ◽  
Linear Response ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Base Region ◽  
Semiconductor Process

A lateral magnetotransistor that is sensitive to a magnetic field applied either parallel or perpendicular to the chip's surface is reported. It is fabricated using the standard complementary metal oxide semiconductor process. The deflection of the carriers in the base region is considered as the basic principle of operation. The device shows a linear response to a magnetic field in both directions. The minimum magnetic induction to be detected is in the order of 10 μT at f = 1 kHz.

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