Computer simulation of hopping conductivity in lightly doped two-dimensional semiconductors

1988 ◽  
Vol 66 (2) ◽  
pp. 150-154 ◽  
Author(s):  
Mark R. A. Shegelski ◽  
Robert Barrie
Keyword(s):  
Numerical Simulation ◽  
Computer Simulation ◽  
Low Temperature ◽  
Density Of States ◽  
Asymptotic Form ◽  
Two Dimensional ◽  
Resistor Network ◽  
Temperature Range ◽  
Full Form ◽  
The Difference

We present the results of a numerical simulation of a two-dimensional lightly doped compensated semiconductor. We choose a flat density of states with width Δε. We model the semiconductor as a Miller and Abrahams type resistor network; we use the full form of the resistance and do not take the low-temperature asymptotic form because we carry out the simulation at temperatures for which kT is of order Δε. We find that there is a wide temperature range for which [Formula: see text] with ε3 = 0.28Δε. This value of ε3 is considerably smaller than values found by others. We believe that the difference between our result and those of other workers may be attributed to their use of the low-temperature form of the resistance [Formula: see text] in a temperature range in which kT is of order Δε.

scholarly journals Numerical Simulation Techniques Research and Application in Genetic Algorithm Design

2014 ◽  
Vol 8 (1) ◽  
pp. 63-68
Author(s):  
Yamian Peng ◽  
Chunfeng Liu ◽  
Dianxuan Gong
Keyword(s):  
Numerical Simulation ◽  
Genetic Algorithm ◽  
Inverse Problem ◽  
Computer Simulation ◽  
Parameter Identification ◽  
Algorithm Design ◽  
Global Optimum ◽  
Two Dimensional ◽  
Simulation Techniques ◽  
Numerical Calculation Method

Numerical simulation techniques are also called computer simulation, which take the computer as a means to study all kinds of engineering and physical problems even natural objective through numerical calculation method and image display. This paper studied the numerical simulation techniques and try to solve two-dimensional convectiondiffusion equation parameter identification inverse problem by the genetic algorithm. Firstly, the finite element method was illustrated to solve the steady problem of two-dimensional convection-diffusion equation before it compute parameter identification inverse problem each time. Subsequently, it can search the best approximate solution from many initial points and obtained the global optimum solution by means of crossover operator and mutation operator. Finally, the paper discussed the computer simulation of GA for solving the inverse problem, and puts forward a new method for solving inverse problem: Genetic algorithm based on the best disturbed iteration. The results of numerical simulation show that the genetic algorithm has the higher accuracy and the quicker convergent speed. And it is easy to program and calculate and is of great application.

Optimization by Numerical Simulation of the Focusing Properties of Self-Magnetically Insulated Ion Diodes

1991 ◽  
Vol 02 (01) ◽  
pp. 536-540
Author(s):  
THOMAS WESTERMANN
Keyword(s):  
Numerical Simulation ◽  
Computer Simulation ◽  
Power Density ◽  
The Self ◽  
Anode Surface ◽  
Two Dimensional ◽  
Simulation Results ◽  
Focusing Properties

We present two-dimensional electromagnetic computer simulation results performed in order to investigate the focusing properties of self-magnetically insulated ion diodes. It has been shown computationally that in the case of the self-magnetically insulated bθ-diode the power density can be improved by a factor 10 by changing the anode surface.

Altering the stability of nanoislands through core–shell supports

Nanoscale ◽  
2019 ◽  
Vol 11 (21) ◽  
pp. 10314-10319
Author(s):  
Carsten Sprodowski ◽  
Karina Morgenstern
Keyword(s):  
Low Temperature ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Core Shell ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Temperature Range ◽  
Ag Nanoclusters ◽  
The Stability ◽  
Temperature Scanning

We follow the decay of two-dimensional Ag nanoclusters, called islands, on Cu–Ag core–shell supports by variable low temperature scanning tunneling microscopy in the temperature range between 160 and 260 K.

Magnetotransport in Thin Films of Lan-nxCa1+nxMnnO3n+1 (n=2,3, and ∞)

1997 ◽  
Vol 494 ◽  
Author(s):  
H. Asano ◽  
J. Hayakawa ◽  
M. Matsui
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Spin Fluctuation ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Number Of Layers ◽  
The Difference

ABSTRACTWith a use of the epitaxial a-axis thin films of perovskite series Lan-nxCa1+nxMnnO3n+1 (n=2,3, and ∞) with fixed carrier concentration (x=0.3), the transport properties of the series compounds have been examined to be associated with the difference in the number of the MnO2 layers. Results have indicated that a reduction in the number of layers results in systematic changes in the various features. These include an increase in resistivity, a decrease in resistivity peak temperature Tcρ corresponding to the metal-insulator transition, an enhancement of the maximum MR near Tcρ, and an increase in low temperature intrinsic MR. In order to explain the variation in these features with the number of MnO2 layers, it is necessary to take both anisotropie c-axis transfer interaction and two-dimensional spin fluctuation into account.

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