Low-temperature crack propagation in a model of a two-dimensional crystal. Molecular-dynamic computer simulation

1989 ◽  
Vol 24 (4) ◽  
pp. 475-479
Author(s):  
E. Ya. Baiguzin ◽  
A. I. Mel'ker ◽  
A. I. Mikhailin
Keyword(s):  
Computer Simulation ◽  
Low Temperature ◽  
Crack Propagation ◽  
Molecular Dynamic ◽  
Two Dimensional ◽  
Dynamic Computer Simulation ◽  
Molecular Dynamic Computer Simulation ◽  
Dimensional Crystal ◽  
Temperature Crack

Molecular-Dynamic Computer Simulation Study of Structural and Transport Properties of Some Amorphous Alloys

1991 ◽  
Vol 02 (01) ◽  
pp. 523-526 ◽  
Author(s):  
O.S. TRUSHIN ◽  
P. NAYAK ◽  
V.S. STEPANYUK ◽  
A.A. KATSNELSON ◽  
A. SZASZ
Keyword(s):  
Computer Simulation ◽  
Amorphous Alloys ◽  
Pair Correlation ◽  
Amorphous State ◽  
Rapid Quenching ◽  
Atomic Level ◽  
Dynamic Phase ◽  
Fast Cooling ◽  
Dynamic Computer Simulation ◽  
Molecular Dynamic Computer Simulation

Here we present the molecular-dynamics computer simulation for a few systems of Ni1−xPx (x=0.2,0.25), Fe1−xPx (x=0.24), and Fe1−xBx (x=0.15) to explore the dynamic phase transformation from liquid to amorphous state through rapid quenching and the structure of these alloys at atomic level. The truncated Morse potential has been used to model the interaction between the atoms. The results of computer simulation for the pair correlation function for these systems reveal some interesting features of the corresponding alloy going from the melt to amorphous state through fast cooling. Finally the analysis of Voronoy polyhedron statistic leads us to propose possible models for the structure at atomic level for these alloys in the amorphous state. For the Ni75P25 system it is also revealed that the metastable state depends on the method of preparation of the sample.

Computer simulation of hopping conductivity in lightly doped two-dimensional semiconductors

1988 ◽  
Vol 66 (2) ◽  
pp. 150-154 ◽  
Author(s):  
Mark R. A. Shegelski ◽  
Robert Barrie
Keyword(s):  
Numerical Simulation ◽  
Computer Simulation ◽  
Low Temperature ◽  
Density Of States ◽  
Asymptotic Form ◽  
Two Dimensional ◽  
Resistor Network ◽  
Temperature Range ◽  
Full Form ◽  
The Difference

We present the results of a numerical simulation of a two-dimensional lightly doped compensated semiconductor. We choose a flat density of states with width Δε. We model the semiconductor as a Miller and Abrahams type resistor network; we use the full form of the resistance and do not take the low-temperature asymptotic form because we carry out the simulation at temperatures for which kT is of order Δε. We find that there is a wide temperature range for which [Formula: see text] with ε3 = 0.28Δε. This value of ε3 is considerably smaller than values found by others. We believe that the difference between our result and those of other workers may be attributed to their use of the low-temperature form of the resistance [Formula: see text] in a temperature range in which kT is of order Δε.

Low temperature crack propagation in an epoxide resin

1980 ◽  
Vol 15 (6) ◽  
pp. 1436-1448 ◽  
Author(s):  
J. M. Scott ◽  
G. M. Wells ◽  
D. C. Phillips
Keyword(s):  
Low Temperature ◽  
Crack Propagation ◽  
Epoxide Resin ◽  
Temperature Crack

A two-dimensional crystal formed by pentamers on Au(111)

2019 ◽  
Vol 55 (38) ◽  
pp. 5427-5430 ◽  
Author(s):  
Chenyang Yuan ◽  
Na Xue ◽  
Xue Zhang ◽  
Yajie Zhang ◽  
Na Li ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Two Dimensional ◽  
Scanning Tunnelling Microscope ◽  
Scanning Tunnelling ◽  
New Type ◽  
Temperature Scanning ◽  
Dimensional Crystal

A new type of two-dimensional crystal comprising supramolecular pentamers on Au(111) is studied using an ultra-high vacuum low-temperature scanning tunnelling microscope.

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