Electrical characterization of n-InP grown by metal-organic vapour-phase epitaxy

At room-temperature, the Hall mobility observed in epitaxic n-InP samples grown by metal-organic vapour-phase epitaxy is often lower than predicted, with a corresponding rise in the electronic concentration. These effects are attributed to the presence of a residual deep donor center that both acts as a strong scatterer and provides the additional electronic excitation observed at high temperature as it ionizes. A binding energy of 215 meV is consistent with both electrical-transport measurements and the observed photoluminescence.