Growth and characterization of GaP layers on silicon substrates by metal-organic vapour phase epitaxy

2012 ◽  
Vol 9 (7) ◽  
pp. 1607-1609 ◽  
Author(s):  
Henri Jussila ◽  
Subramaniyam Nagarajan ◽  
Päivi Mattila ◽  
Juha Riikonen ◽  
Teppo Huhtio ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Silicon Substrates ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

EXCITON AND BIEXCITON PHENOMENA IN ZINC SULPHIDE EPILAYERS

1996 ◽  
Vol 05 (04) ◽  
pp. 621-629 ◽  
Author(s):  
J. VALENTA ◽  
D. GUENNANI ◽  
A. MANAR ◽  
P. GILLIOT
Keyword(s):  
Optical Gain ◽  
Vapour Phase ◽  
Zinc Sulphide ◽  
Detailed Characterization ◽  
Vapour Phase Epitaxy ◽  
Nanosecond Lasers ◽  
Metal Organic ◽  
Organic Vapour ◽  
Linear Optical Properties

The detailed characterization of metal organic vapour phase epitaxy grown ZnS layers on GaAs is the first step towards the study of their different non-linear optical properties performed with nanosecond lasers. Biexciton phenomena (with a binding energy of about 10 meV) are observed in photoluminescence-excitation and optical-gain spectra.

Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy

1994 ◽  
Vol 9 (11) ◽  
pp. 2073-2079 ◽  
Author(s):  
A Chergui ◽  
J Valenta ◽  
J L Loison ◽  
M Robino ◽  
I Pelant ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Electrical characterization of n-InP grown by metal-organic vapour-phase epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 846-849
Author(s):  
M. Benzaquen ◽  
D. Walsh ◽  
K. Mazaruk ◽  
P. Weissfloch ◽  
N. Puetz ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Electrical Characterization ◽  
Vapour Phase ◽  
Donor Center ◽  
Vapour Phase Epitaxy ◽  
Deep Donor ◽  
Metal Organic ◽  
Organic Vapour ◽  
Electronic Concentration

At room-temperature, the Hall mobility observed in epitaxic n-InP samples grown by metal-organic vapour-phase epitaxy is often lower than predicted, with a corresponding rise in the electronic concentration. These effects are attributed to the presence of a residual deep donor center that both acts as a strong scatterer and provides the additional electronic excitation observed at high temperature as it ionizes. A binding energy of 215 meV is consistent with both electrical-transport measurements and the observed photoluminescence.

Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 509-514 ◽  
Author(s):  
T.K Sharma ◽  
B.M Arora ◽  
M.R Gokhale ◽  
S Rajgopalan
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor

2007 ◽  
Vol 298 ◽  
pp. 403-408 ◽  
Author(s):  
Abdul Kadir ◽  
Tapas Ganguli ◽  
M.R. Gokhale ◽  
A.P. Shah ◽  
S.S. Chandvankar ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

2010 ◽  
Vol 312 (5) ◽  
pp. 641-644 ◽  
Author(s):  
S. Gautier ◽  
G. Orsal ◽  
T. Moudakir ◽  
N. Maloufi ◽  
F. Jomard ◽  
...  
Keyword(s):  
Boron Content ◽  
Vapour Phase ◽  
Quaternary Alloys ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour
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