High-resolution photon yield of xenon by monoenergetic electron impact
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The broad-band (165–650 nm) photon yield of xenon by monoenergetic electron excitation has been measured in the range from 10.9 eV to above 13.436 eV (2P1/2 limit). Neutral excited states and several new negative-ion states are detected. Interpretation and classification are discussed.
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1980 ◽
Vol 13
(23)
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pp. L723-L728
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1977 ◽
Vol 10
(16)
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pp. L629-L633
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1968 ◽
Vol 1
(1)
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pp. 102-104
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