High precision electrical resistivity measurements on potassium below 1 K

1982 ◽  
Vol 60 (5) ◽  
pp. 703-709 ◽  
Author(s):  
William P. Pratt Jr.
Keyword(s):  
Electrical Resistivity ◽  
Simple Model ◽  
Temperature Dependence ◽  
Temperature Variation ◽  
High Precision ◽  
Electron Scattering ◽  
Room Temperature ◽  
Temperature Treatment ◽  
Resistivity Measurements

New ultra-high precision (0.1 ppm) measurements of the resistivity of potassium down to 70 mK are discussed. Between 0.35 and 1.2 K. the resistivity has a T2 temperature dependence which is independent of the sample parameters and the room temperature treatment of the samples. This behavior is consistent with the predictions for simple electron–electron scattering, but such a simple model cannot adequately explain previous data. Below 0.35 K the data are anomalous in that the temperature variation is slower than T2.

Evolution of crystal structure of dual layered molecular conductor (ET)4ZnBr4(C6H4Cl2) with temperature

CrystEngComm ◽  
2021 ◽  
Author(s):  
Gennady V. Shilov ◽  
Elena I. Zhilyaeva ◽  
Sergey M. Aldoshin ◽  
Alexandra M Flakina ◽  
Rustem B. Lyubovskii ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electrical Resistivity ◽  
Single Crystal ◽  
Room Temperature ◽  
Organic Conductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Resistivity Measurements ◽  
Molecular Conductor ◽  
Abrupt Changes

Electrical resistivity measurements of a dual layered organic conductor (ET)4ZnBr4(1,2-C6H4Cl2) above room temperature show abrupt changes in resistivity at 320 K. Single-crystal X-ray diffraction studies in the 100-350 K range...

CRYSTAL GROWTH OF MULTI-LAYERED Ba2Ca4Cu5O10(O,F)2 (F-0245) SUPERCONDUCTOR UNDER HIGH PRESSURE

2005 ◽  
Vol 19 (01n03) ◽  
pp. 263-266 ◽  
Author(s):  
K. TOKIWA ◽  
H. OKUMOTO ◽  
S. KONO ◽  
S. IGA ◽  
K. TAKEMURA ◽  
...  
Keyword(s):  
High Pressure ◽  
Electrical Resistivity ◽  
Crystal Growth ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Cuprate Superconductors ◽  
Resistivity Measurements ◽  
Starting Mixture

Single crystals of multi-layered Ba 2 Ca 4 Cu 5 O 10( O , F )2 superconductor(F-0245) have been grown under a high pressure of 4.5 GPa . Single crystals with in-plane length of 500μm were typically obtained and flat shiny areas with more than 1 mm 2 were also observed on the surface of fractured samples. Tc values for these samples were determined by electrical resistivity measurements. These values were found to change from 70 K to 85 K by change of oxygen and fluorine contents in the starting mixture. The temperature dependence of resistivity showed characteristic of under-doped cuprate superconductors.

Electrical resistivity measurements in palladium–hydrogen alloys

1968 ◽  
Vol 46 (18) ◽  
pp. 2065-2071 ◽  
Author(s):  
C. T. Haywood ◽  
L. Verdini
Keyword(s):  
Electrical Resistivity ◽  
Transition Metals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Residual Resistivity ◽  
Resistivity Measurements ◽  
Order Of Magnitude ◽  
Rate Of Cooling ◽  
High Concentrations ◽  
Pure Palladium

The resistivity of palladium and palladium–hydrogen alloys has been studied in the temperature range 2–300 °K. At low temperatures (10 °K < T < 60 °K), it is found that ρ1 is proportional to Tn with n = 3.1 for pure palladium; but n decreases to 2.3 for an alloy with H/Pd = 0.25. For high concentrations and at low temperatures, the resistivity is found to be dependent upon the time and rate of cooling through the [Formula: see text] transformation. The residual resistivity is lower for faster cooling rates.The increase in resistivity due to 1 at. % hydrogen in palladium is calculated and found to be of the same order of magnitude as that for interstitials in other f.c.c. metals, but less then that found for hydrogen in the b.c.c. transition metals tantalum and niobium at room temperature.

Electrical resistivity of gallium single crystals at low temperatures

1951 ◽  
Vol 209 (1099) ◽  
pp. 542-550 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Specific Heat ◽  
Single Crystals ◽  
Low Temperatures ◽  
Room Temperature ◽  
Resistivity Measurements ◽  
Characteristic Temperatures ◽  
The Ideal

Electrical resistivity measurements on single crystals of gallium grown to conform approximately to the three axial directions have been extended to low temperatures, detailed investigation being made over the range 20.4 to 4.2° K. The anisotropy of this property increases in this region where the resistivity ratios for the three specimens are approximately 1: 2.1: 8 compared with 1: 2.1 6 : 6.5 5 at room temperature. The ‘ideal’ resistivity is proportional to T n , where n ≃ 4.45 for the range 5 to 12° K and decreases to about 3.9 for the range 12 to 20.4° K. The characteristic temperatures as derived from Grüneisen’s expression show relatively small differences for the three axial directions but decrease with decrease in temperature. Comparable variations with temperature are observed in the characteristic temperatures derived previously from specific heat measurements on gallium.

Electrical Resistivity Measurements: A Sensitive Tool for Studying Aluminium Alloys

2006 ◽  
Vol 519-521 ◽  
pp. 1391-1396 ◽  
Author(s):  
B. Raeisinia ◽  
Warren J. Poole
Keyword(s):  
Electrical Resistivity ◽  
Aluminum Alloys ◽  
Aluminium Alloys ◽  
Room Temperature ◽  
Pure Aluminum ◽  
Cold Work ◽  
Resistivity Measurements ◽  
Sensitive Tool ◽  
Solute Atoms

This paper examines the challenges which are encountered when using electrical resistivity measurements for characterization of microstructures in aluminum alloys. Experimental examples are provided of electrical resistivity studies conducted on two aluminum alloys, a heattreatable alloy (AA6111) and a non-heat-treatable alloy (AA5754), which demonstrate how the technique can be used to characterize changes in the microstructure. Results on AA6111 show that the dependence of the measurement on solute atoms and fine scale precipitates makes deconvolution of the resistivity signal non-trivial and therefore, utilization of supplementary technique(s) in conjunction with electrical resistivity measurements is essential. In the next example, room temperature electrical resistivity measurements as a function of cold work for AA5754 illustrate a larger resistivity contribution from dislocations in this alloy as compared to that reported for pure aluminum. The interaction of solutes and dislocations is cited as the possible source for the increased dislocation contribution.

High precision electrical resistivity measurements on potassium

Physica B+C ◽  
1981 ◽  
Vol 108 (1-3) ◽  
pp. 863-864 ◽  
Author(s):  
W.P. Pratt ◽  
C.W. Lee ◽  
M.L. Haerle ◽  
V. Heinen ◽  
J. Bass ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
High Precision ◽  
Resistivity Measurements

Electrical properties of chain and sheet mercury compounds

1985 ◽  
Vol 314 (1528) ◽  
pp. 115-124 ◽  
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Fermi Surface ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Layered Compounds ◽  
Surface Model ◽  
Helium Temperature ◽  
Mercury Compounds ◽  
Chain Compounds

The electrical resistivity of the chain compounds Hg 3-δ AsF 6 and Hg 3-δ SbF 6 decreases with decreasing temperature. It is shown that the temperature dependence of the resistivity of Hg 3-δ SbF 6 depends on the rate that a sample is cooled from room temperature to liquid helium temperature. The electrical resistivity of the layered compounds Hg 3 TaF 6 and Hg 3 NbF 6 is metallic from 300 to 1.4 K. The induced torque, de Haas-van Alphen effect and resistivity of the chain compounds are related to the cylindrical Fermi surface model. Superconductivity of the compounds is discussed.

Classification of Icosahedral Quasicrystals and their Approximants by the Electronic Conduction Mechanisms

2000 ◽  
Vol 643 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Eiichi Banno ◽  
Tomohide Onogi ◽  
Takayuki Mizunol ◽  
Takuya Sato ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electronic Structure ◽  
Temperature Dependence ◽  
Electron Scattering ◽  
Weak Localization ◽  
Electronic Conduction ◽  
Boltzmann Transport ◽  
Scattering Mechanism ◽  
Icosahedral Quasicrystals

AbstractIn this paper, two independent factors, electronic structure at the Fermi energy and electron scattering, both of which determine the electrical resistivity, are clearly separated by using a plot of ρ4K versus RRR (RRR = ρ4K/ρ300K) for icosahedral quasicrystals and their approximants. Each contribution of the electronic structure and the electron scattering on the electrical resistivity was systematically revealed, and the origin for the high resistivities observed in the quasicrystals and approximants is well understood by taking each effect into account. We found that the quasicrystals and approximants are classified into three groups in terms of the electron scattering mechanism, which dominates the temperature dependence of the resistivity. The temperature dependence of the electrical resistivity in the first group is well understood in terms of the Boltzmann transport mechanism, and those in the second and the third groups are in terms of the weak localization and the Anderson localization, respectively.

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