Vacancy doping by off-stoichiometry in mercury chalcogenides

1978 ◽  
Vol 56 (5) ◽  
pp. 610-614 ◽  
Author(s):  
C. Fau ◽  
J. Calas ◽  
M. Averous ◽  
B. A. Lombos

The influence of cation and anion vacancies on the transport properties of mercury telluride was investigated. The off-stoichiometry created vacancies were introduced by annealing the samples under controlled mercury vapor pressure. Transport property measurements between 1.6 and 300 K with magnetic field intensities, increasing up to0.6 Wb m−2, supplied the data to be analyzed using a two band model. The vacancies in turn introduced slow or heavy electrons and at high enough vacancy concentration, holes were also introduced. The mobilities, concentrations of the light and heavy electrons, or holes, and their influence on the electrical characteristics of mercury telluride could be quantitatively evaluated.

Author(s):  
L.E. Murr

The production of void lattices in metals as a result of displacement damage associated with high energy and heavy ion bombardment is now well documented. More recently, Murr has shown that a void lattice can be developed in natural (colored) fluorites observed in the transmission electron microscope. These were the first observations of a void lattice in an irradiated nonmetal, and the first, direct observations of color-center aggregates. Clinard, et al. have also recently observed a void lattice (described as a high density of aligned "pores") in neutron irradiated Al2O3 and Y2O3. In this latter work, itwas pointed out that in order that a cavity be formed,a near-stoichiometric ratio of cation and anion vacancies must aggregate. It was reasoned that two other alternatives to explain the pores were cation metal colloids and highpressure anion gas bubbles.Evans has proposed that void lattices result from the presence of a pre-existing impurity lattice, and predicted that the formation of a void lattice should restrict swelling in irradiated materials because it represents a state of saturation.


1967 ◽  
Vol 45 (1) ◽  
pp. 119-126 ◽  
Author(s):  
J. Basinski ◽  
R. Olivier

Hall effect and resistivity measurements have been made in the temperature range 4.2–360 °K on several samples of n-type GaAs grown under oxygen atmosphere and without any other intentional dopings. The principal shallow donor in this material is considered to be Si. All samples exhibited impurity-band conduction at low temperature. Electron concentrations in the conduction band were calculated, using a two-band model, and then fitted to the usual equation expressing charge neutrality. A value of 2.3 × 10−3 eV was obtained for the ionization energy of the donors, for donor concentration ranging from 5 × 1015 cm−3 to 2 × 1016 cm−3. The conduction in the impurity band was of the hopping type for these concentrations. A value of 3.5 × 1016 cm−3 was obtained for the critical transition concentration of the impurity-band conduction to the metallic type.


1996 ◽  
Vol 10 (30) ◽  
pp. 1483-1490 ◽  
Author(s):  
M. MORENO ◽  
R. M. MÉNDEZ-MORENO ◽  
M. A. ORTIZ ◽  
S. OROZCO

Multi-band superconductors are analyzed and the relevance of overlapping energy bands to the high-T c of these materials is studied. Within the BCS framework, a two band model with generalized Fermi surface topologies is developed. Values of the overlapped occupancy parameters for typical cuprate superconductors are obtained as a function of the ratio R and the effective coupling constant, λ, in the weak-coupling limit. The overlap scale is of the order or lower than the cutoff (Debye) energy. The typical behavior of the isotope effect is obtained. As these superconductors have transition temperatures above the phonon barrier, the results of this approach are important to the generic understanding of the high-T c superconducting mechanism.


1982 ◽  
Vol 37 (10) ◽  
pp. 1127-1131 ◽  
Author(s):  
D. H. Kurlat ◽  
M. Rosen

The Seebeck coefficient (S) of Sni1-x- Tex liquid alloys was measured as a function of concentration and temperature. For 0 ≦ x <0.45 the behaviour is metallic; S values are small and negative, rising linearly with temperature. The predicted values of Ziman's theory when using the hard sphere approximation disagree with the experimental ones. The change in sign occurs for 0.45. For x = 0.5 (stoichiometric composition) the thermoelectric power decreases linearly with temperature. This fact is explained assuming a two-band model. For x ≧ 0.6 the liquid alloy becomes more semiconducting and presents a maximum in the isotherms of S for x = 0.65. For the excess tellurium concentration range we have calculated the difference EF - EV and γ/kB, assuming a S(1/T) law. The experimental values are compared with those of Dancy and Glazov.


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