Transport properties of tungsten-doped VO2
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Measurements of DC and AC conductivity and thermopower show that VO2: W can be treated as a conventional n-type extrinsic semiconductor with a donor level 0.06–0.08 eV below the conduction band. For samples with an impurity content from 0.67 → 1.70 at.% W, an effective mass ratio m*/m of 65 ± 10 and a compensation ratio of 0.7 ± 0.1 are deduced from conventional semiconductor theory assuming donor exhaustion just below the metal semiconductor transition.
2015 ◽
Vol 621
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pp. 170-178
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2004 ◽
Vol 13
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pp. 277-281
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1990 ◽
Vol 6
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pp. 325-335
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2009 ◽
Vol 150
(2)
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pp. 022015