Les propriétés optiques du hafnium dans l'ultraviolet à vide

1975 ◽  
Vol 53 (11) ◽  
pp. 1025-1029 ◽  
Author(s):  
L. J. Leblanc ◽  
Vo-Van Truong
Keyword(s):  
Spectral Region ◽  
Optical Constants ◽  
Index Of Refraction ◽  
Interband Transitions ◽  
Complex Index ◽  
Plasma Peak ◽  
Propriétés Optiques ◽  
Complex Index Of Refraction

The reflectance of hafnium was measured at five different angles of incidence in the spectral region from 500 to 1900 Å. By iterative calculations the centroid of the points of intersection of the isoreflectance curves was determined, thus yielding the complex index of refraction. Analysis of the optical constants indicates that interband transitions could be found near 7.3, 8.4, and 13.5 eV. A plasma peak is observed near 18.7 eV.

scholarly journals Anisotropic Complex Refractive Indices of Atomically Thin Materials: Determination of the Optical Constants of Few-Layer Black Phosphorus

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5736
Author(s):  
Aaron M. Ross ◽  
Giuseppe M. Paternò ◽  
Stefano Dal Conte ◽  
Francesco Scotognella ◽  
Eugenio Cinquanta
Keyword(s):  
Optical Constants ◽  
Transition Metal Dichalcogenides ◽  
Black Phosphorus ◽  
Index Of Refraction ◽  
Refractive Indices ◽  
Complex Index ◽  
Metal Dichalcogenides ◽  
Reflectance Data ◽  
Complex Index Of Refraction

In this work, studies of the optical constants of monolayer transition metal dichalcogenides and few-layer black phosphorus are briefly reviewed, with particular emphasis on the complex dielectric function and refractive index. Specifically, an estimate of the complex index of refraction of phosphorene and few-layer black phosphorus is given. The complex index of refraction of this material was extracted from differential reflectance data reported in the literature by employing a constrained Kramers–Kronig analysis combined with the transfer matrix method. The reflectance contrast of 1–3 layers of black phosphorus on a silicon dioxide/silicon substrate was then calculated using the extracted complex indices of refraction.

Optical properties of amorphous hydrogenated carbon films: A spectroscopic ellipsometry study

1987 ◽  
Vol 2 (5) ◽  
pp. 645-647 ◽  
Author(s):  
Shuhan Lin ◽  
Shuguang Chen
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Carbon Films ◽  
Index Of Refraction ◽  
The Real ◽  
Complex Index ◽  
Tentative Explanation ◽  
Amorphous Hydrogenated Carbon ◽  
Ellipsometry Data ◽  
Complex Index Of Refraction

Optical properties of plasma-deposited amorphous hydrogenated carbon films were studied by spectroscopic ellipsometry. From the ellipsometry data, the real and imaginary parts, n and k, of the complex index of refraction of the film have been deduced for photon energies between 2.0 and 4.0 eV for as-grown as well as for thermally annealed films. Here n and k showed considerable variation with subsequent annealing, even under 400°C. A tentative explanation of the results is proposed.

Optical Properties of Metal Films and Their Silicides

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Simard-Normandin ◽  
A. Naem ◽  
M. Saran
Keyword(s):  
Optical Properties ◽  
Optical Constants ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Films ◽  
Index Of Refraction ◽  
Contact Method ◽  
Microelectronic Fabrication ◽  
Silicide Growth ◽  
Complex Index Of Refraction

ABSTRACTSilicides are used widely in microelectronic fabrication, yet there are very little data available regarding their optical constants at most wavelengths, and specifically at those of interest to G-line and I-line lithography. We have studied extensively the optical properties of Ti, Co, as metal films and as silicide films formed at various temperatures, and of CVD (chemical vapour deposition) W. Using spectroscopic ellipsometry at two angles of incidence, we have calculated the complex index of refraction N = (n, k) of these films every 10nm at 68 wavelengths between 230 and 900nm. These data are necessary to model accurately the reflectivity of wafers to study the effects of various thermal and surface treatments on silicide growth and to set exposure times for lithography. They also allow the use of reflectivity vs X as a non-contact method to map film thicknesses across wafers within the patterned devices themselves.

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