Nitrogen Implanted Germanium: Damage, Lattice Location, and Electrical Properties

1975 ◽  
Vol 53 (3) ◽  
pp. 303-309 ◽  
Author(s):  
A. B. Campbell ◽  
J. B. Mitchell ◽  
J. Shewchun ◽  
D. A. Thompson ◽  
J. A. Davies
Keyword(s):  
Electrical Properties ◽  
Radiation Damage ◽  
Nuclear Reactions ◽  
Lattice Location ◽  
Site Location ◽  
Temperature Range ◽  
Helium Ion ◽  
Location Study ◽  
Ion Backscattering

The radiation damage, implanted atom location, and electrical properties of nitrogen implanted germanium have been studied following anneals in the temperature range of 300–700 °C. Helium ion backscattering was used to measure the damage while two nuclear reactions, the 14N(d, α)12C and the 15N(p, α)12C, were used together with channeling techniques for the atom site location study. The results indicate that ~85% of the implanted nitrogen was located on nonsubstitutional sites, and also that the nitrogen did not outdiffuse from the germanium for anneals as high as 700 °C. The I–V characteristics of mesa structures formed in the implanted germanium indicate that, nitrogen had not become a donor in germanium.

Si-On-Sapphire and Si Implanted with Zr Ions: Lattice Location, Solid Phase Epitaxial Regrowth, and Electrical Properties

1982 ◽  
Vol 14 ◽  
Author(s):  
I. Golecki ◽  
I. Suni
Keyword(s):  
Electrical Properties ◽  
Surface Segregation ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Lattice Location ◽  
Temperature Range ◽  
Epitaxial Regrowth ◽  
Amorphous Si ◽  
Solid Phase Regrowth

ABSTRACTZr ions have been implanted at 300 keV (Rp= 1400Å) and doses of 3×1012 − 3×l015 Zr/cm2 into Si-implanted, amorphous Sip layers on (100) bulk Si and Sion- sapphire. Rutherford backscattering and channeling spectrometry was used to study the Zr distribution and lattice location during solid-phase regrowth of the Si layers. The regrowth at 500—550°C stops at 3.4хl020 Zr/cm3, and Zr exhibits interface trapping and surface segregation effects. In this temperature range, Zr is essentially non-substitutional, and inactive electrically.

Lattice location study of H in Ta by the channelling method

1987 ◽  
Vol 130 ◽  
pp. 207-208 ◽  
Author(s):  
E. Yagi ◽  
S. Nakamura ◽  
T. Kobayashi ◽  
F. Kanoa ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Lattice Location ◽  
Location Study

Radiation damage in helium ion irradiated nanocrystalline Fe

2012 ◽  
Vol 425 (1-3) ◽  
pp. 140-146 ◽  
Author(s):  
K.Y. Yu ◽  
Y. Liu ◽  
C. Sun ◽  
H. Wang ◽  
L. Shao ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Helium Ion

Electrical Properties of Orthorhombic Iron Disilicide

1998 ◽  
Vol 545 ◽  
Author(s):  
Jun-Ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Electrical Properties ◽  
Solid Solutions ◽  
Hole Concentration ◽  
Band Model ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Temperature Range ◽  
Order Of Magnitude ◽  
Mn Doped ◽  
Two Band Model

AbstractIn order to clarify the electrical properties of Cr-doped β-FeSi2(Fe1-xCrxSi2) and Mn-doped β--FeSi2(Fel-yMnySi2), the Hall effect and electrical resistivity of Fe1-xCrxSi2(0.01 ≦ x ≦ 0.05) and Fel-yMnySi2(0.01 ≦ y ≦ 0.10) have been measured in the temperature range between 80 and 300 K. fhe solid solutions Fel-xCrxSi2and Fel-yMnySi2are p-type over the measured temperature range. The observed features of RH of these solid solutions are explained by using the two-band model with the existence of two acceptor levels. The hole concentration of Fe1-xCrxSi2at 300 K ranges from 8.9×1018cm−3for x=0.01 to 1.1×1020cm−3for x=0.05, which is one order of magnitude higher than that of Fel-yMnySi2.

scholarly journals Mechanical and Electrical Properties of Polylactic Acid with Aliphatic-Aromatic Polyester

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Katsuyoshi Shinyama
Keyword(s):  
Electrical Properties ◽  
Polylactic Acid ◽  
Breakdown Strength ◽  
Electric Breakdown ◽  
Electrical Wire ◽  
Temperature Range ◽  
Mechanical And Electrical Properties ◽  
Aromatic Polyester

Assuming an application where polylactic acid (PLA), a hard bioplastic, is used to sheath electrical wire, the author added 20 wt% of aliphatic-aromatic polyester or polybutyrate adipate terephthalate (PBAT), a soft resin, to PLA and then investigated the softened PLA’s mechanical and electrical properties. As a result of adding PBAT to PLA, Tg shifted to about 10°C lower than PLA. In addition, adding PBAT to PLA made the PLA softer and even more so at temperatures above 40°C. Furthermore, adding PBAT to PLA decreased the electric breakdown strength (EB) of the PLA by about 1 MV/cm over the temperature range of 0°C to 50°C, and EB was slightly higher than that of PVC over the temperature range of −10 to 60°C.

Low‐dose implantation of Sb in Si1−xGexepitaxial layers: Correlation between electrical properties and radiation damage

1994 ◽  
Vol 75 (1) ◽  
pp. 377-381 ◽  
Author(s):  
Z. Atzmon ◽  
M. Eizenberg ◽  
Y. Shacham‐Diamand ◽  
J. W. Mayer ◽  
F. Schäffler
Keyword(s):  
Electrical Properties ◽  
Radiation Damage ◽  
Low Dose

Channeling Measurements on Deuterium Implanted Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
B. Bech Nielsen
Keyword(s):  
Nuclear Reaction ◽  
Tetrahedral Site ◽  
Lattice Location ◽  
Temperature Range ◽  
Bond Center ◽  
Ion Implanted

ABSTRACTThe channeling technique has been used to study the lattice location of deuterium ion-implanted into silicon. Compared to earlier measurements by Picraux and Vook, the temperature range has been extended from 30 to 500 K, and the dose has been decreased down to ≃ 8 × 1014 D/cm2. The implantation was performed at 30 K gnd at an energy of 10 keV. The channeling analysis was done using the d(3 He,p)4 He nuclear reaction. Angular scans were measured along the <100>, <110>, <111> axis and the {100}, {110}, {111} planes, Experiments were carried out on the implanted sample (30K) and after annealing to 200 and 500 K. In the as-implanted sample, 80% of the deuterium is located close to the bond center, whereas the remaining 20% is placed at the tetrahedral site. The deuterium sites change after annealing to 200 and 50OK, and the nature of these annealings stages will be discussed.

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