Gain Distribution in a CO2 TEA Laser

1972 ◽  
Vol 50 (20) ◽  
pp. 2471-2474 ◽  
Author(s):  
A. M. Robinson
Keyword(s):  
High Pressure ◽  
Population Density ◽  
Laser System ◽  
Small Signal Gain ◽  
Small Signal ◽  
Maximum Gain ◽  
Signal Gain ◽  
Vibrational Transitions

The distribution of small signal gain over 23 P- and R-branch lines in the 10.4 μm region of CO2 has been measured in a transversely excited high pressure CO2 laser system. The upper population density, the inversion density, and the temperature were determined by fitting a pressure-broadened gain distribution over the rotational–vibrational transitions at the time of maximum gain for pressures of 100, 400, and 755 Torr.

Effect of Capacitance on Gain in a Transversely Pulsed CO2 Discharge

1972 ◽  
Vol 50 (18) ◽  
pp. 2138-2148 ◽  
Author(s):  
A. M. Robinson
Keyword(s):  
High Pressure ◽  
Temperature Increase ◽  
Arc Discharge ◽  
Electrical Energy ◽  
Gas Pressure ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

The small signal gain of a transversely pulsed high pressure CO2 discharge has been measured as a function of the discharge driving capacitance. The gain was observed to first increase and then decrease with capacitance for the 3 gas mixes investigated. The decrease in gain is caused by heating of the gas and a degradation of the discharge from a pulsed glow to an arc discharge. The duration of the gain pulse decreased with capacitance and for a 60:0:40 CO2:He:N2 mix an absorption of up to 30% over 27 cm was observed following the gain pulse. The results of calculation of the expected temperature increase of the gas were consistent with the observed absorption. The fraction of the electrical energy distributed between the electrode ballast resistors and the amplifier discharge was constant with respect to capacitance but varied approximately inversely with gas pressure.

Carbon dioxide laser system with zero small signal gain

1980 ◽  
Vol 19 (3) ◽  
pp. 420 ◽  
Author(s):  
J. F. Figueira ◽  
A. V. Nowak
Keyword(s):  
Carbon Dioxide ◽  
Carbon Dioxide Laser ◽  
Laser System ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

Small signal gain time behavior on high vibrational transitions (V>15) of pulsed CO laser amplifier

2004 ◽  
Author(s):  
Andrei A. Ionin ◽  
Yurii M. Klimachev ◽  
Andrei A. Kotkov ◽  
Dmitrii V. Sinitsyn ◽  
Leonid V. Seleznev ◽  
...  
Keyword(s):  
Small Signal Gain ◽  
Time Behavior ◽  
Small Signal ◽  
Laser Amplifier ◽  
Co Laser ◽  
Signal Gain ◽  
Vibrational Transitions

scholarly journals Small-signal Gain of High Pressure Sealed-off cwCO2 Laser.

1980 ◽  
Vol 8 (2) ◽  
pp. 388-395
Author(s):  
Kouzaburo SIBAYAMA ◽  
Haruhiko NAGAI ◽  
Akio NAGAI
Keyword(s):  
High Pressure ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

Sign in / Sign up

Export Citation Format

Share Document