Field-Ion Microscopy of Tungsten Bombarded by Low-Energy Argon Ions

1972 ◽  
Vol 50 (8) ◽  
pp. 791-797 ◽  
Author(s):  
B. Gregov ◽  
R. P. W. Lawson
Keyword(s):  
Point Defects ◽  
High Voltage ◽  
Defect Density ◽  
Ion Beam ◽  
Low Energy ◽  
Field Ion Microscopy ◽  
Argon Ions ◽  
Ion Microscopy ◽  
Field Ion Microscope

The investigation of low-energy ion radiation damage in tungsten by field-ion microscopy is discussed. An experimental arrangement is described in which prepared field-ion microscope specimens may be bombarded in situ by ions from an ion gun. The background pressure in the range of 10−11 Torr allows bombardment to be carried out while the high voltage is off. Results of specimens bombarded with Ar+ ions in the 150–450 eV range at 63 °K are described. Diffusion of self-interstitials upon annealing the irradiated specimen from 63 to 78 °K has been observed. Besides point defects, clusters of vacancies and interstitials have been observed on specimens bombarded with 400 and 450 eV Ar+ ions. The irradiation-induced defect density on the side of the microscope specimen facing the ion beam is approximately double that on the far side.

Field-Ion Microscopy of BCC Metals: A Study of Image Differences and Topographical Variations

1973 ◽  
Vol 31 ◽  
pp. 114-115
Author(s):  
O. T. Inal ◽  
L. E. Murr
Keyword(s):  
Liquid Nitrogen ◽  
Liquid Nitrogen Temperature ◽  
Surface Atom ◽  
Image Brightness ◽  
Field Ion Microscopy ◽  
Topographic Features ◽  
Bcc Metals ◽  
Electron Orbital ◽  
Ion Microscopy ◽  
Field Ion Microscope

When sharp metal filaments of W, Fe, Nb or Ta are observed in the field-ion microscope (FIM), their appearance is differentiated primarily by variations in regional brightness. This regional brightness, particularly prominent at liquid nitrogen temperature has been attributed in the main to chemical specificity which manifests itself in a paricular array of surface-atom electron-orbital configurations.Recently, anomalous image brightness and streaks in both fcc and bee materials observed in the FIM have been shown to be the result of surface asperities and related topographic features which arise by the unsystematic etching of the emission-tip end forms.

Field ion microscopy

1988 ◽  
Vol 46 ◽  
pp. 434-435
Author(s):  
Gert Ehrlich
Keyword(s):  
Low Temperature ◽  
Sample Surface ◽  
Low Pressure ◽  
Radius Of Curvature ◽  
Field Ion Microscopy ◽  
Phosphor Screen ◽  
Ion Microscopy ◽  
Field Ion Microscope

The field ion microscope, devised by Erwin Muller in the 1950's, was the first instrument to depict the structure of surfaces in atomic detail. An FIM image of a (111) plane of tungsten (Fig.l) is typical of what can be done by this microscope: for this small plane, every atom, at a separation of 4.48Å from its neighbors in the plane, is revealed. The image of the plane is highly enlarged, as it is projected on a phosphor screen with a radius of curvature more than a million times that of the sample. Müller achieved the resolution necessary to reveal individual atoms by imaging with ions, accommodated to the object at a low temperature. The ions are created at the sample surface by ionization of an inert image gas (usually helium), present at a low pressure (< 1 mTorr). at fields on the order of 4V/Å.

Study of scalable IBS nanopatterning mechanisms for III-V semiconductors using in-situ surface characterization

2011 ◽  
Vol 1354 ◽  
Author(s):  
Jean Paul Allain ◽  
Osman El-Atwani ◽  
Alex Cimaroli ◽  
Daniel L. Rokusek ◽  
Sami Ortoleva ◽  
...  
Keyword(s):  
Surface Chemistry ◽  
Surface Characterization ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Self Organization ◽  
Beam Parameter ◽  
Ion Beam Sputtering

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.

High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
H. Temkin ◽  
L. R. Harriott ◽  
J. Weiner ◽  
R. A. Hamm ◽  
M. B. Panish
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Low Energy ◽  
High Quality ◽  
Lithography Process ◽  
Luminescence Efficiency ◽  
Surface Steps ◽  
Inp Substrates ◽  
Vacuum Lithography

AbstractWe demonstrate a vacuum lithography process which uses a finely focused Ga ion beam to write the pattern which is then transferred to the InP pattern by low energy dry etching. Surface steps on the order of 1000-2000A in height, and lateral resolution limited only by size of the ion beam, can be efficiently prepared using moderate Ga ion fluences. The surfaces prepared by this process are damage free and suitable for epitaxial overgrowth. GaInAs/InP heterostructures grown on in-situ patterned substrates show excellent morphology and high luminescence efficiency.

Ion-beam-assisted growth of doped Si layers

1988 ◽  
Vol 3 (6) ◽  
pp. 1212-1217 ◽  
Author(s):  
F. Priolo ◽  
A. La Ferla ◽  
E. Rimini
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Point Defects ◽  
Ion Beam ◽  
Target Temperature ◽  
Defects And Impurities

The growth of preamorphized silicon layers doped by multiple energy implants of boron, phosphorus, and boron plus phosphorus ions was investigated under irradiation with a 600 keV Kr+ + beam. The target temperature was set in the range 250–450 °C. During irradiation the growth was measured in situ by transient reflectivity. Boron and phosphorus at a concentration of 1 × 1020/cm3 enhance the rate by a factor of 3 and 2, respectively, whilst in compensated samples the rate is still more than a factor of 2 higher than in intrinsic or Ge-doped samples. This growth rate is characterized by an activation energy of 0.32 ± 0.05 eV which is, within the experimental uncertainties, independent of the dopant. The results are tentatively explained in terms of an interaction between generated point defects and impurities that increases the lifetime of defects at the crystal–amorphous interface.

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

In-Situ Tem Characterization of Whiskers on Al Electrodes for Thin-Film Transistors

1996 ◽  
Vol 441 ◽  
Author(s):  
K. Tsujimoto ◽  
S. Tsuji ◽  
H. Saka ◽  
K. Kuroda ◽  
H. Takatsuji ◽  
...  
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Focused Ion Beam ◽  
Liquid Crystal Display ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Dark Field ◽  
Growth Stages ◽  
In Situ Tem

AbstractThe recent attention paid to stress migration of aluminum (Al) electrodes in thin-film transistor liquid crystal display (TFT-LCD) applications indicates that wiring materials with low electrical resistivities are of considerable interest for their potential use in higher-resolution displays. In this paper, we firstly describe how as-grown Al whiskers on Al electrodes fabricated on a LCD-grade glass substrate can be characterized by means of a high-voltage transmission electron microscope (HV-TEM) operated at 1 MV. The whiskers ranging from 300 to 400 nm in diameter are sufficient to be transparent to high-voltage electrons. This allows detailed observation of whisker characteristics such as its morphology and crystallography. In most cases, the as-grown Al whiskers in our study had straight rod shapes, and could be regarded as single crystals. Secondly, we report on the in-situ fabrication and observation of Al whiskers at elevated temperature with the HV-TEM. Since relatively thick TEM samples (up to about 1 mm) can be set on a sample holder in the HV-TEM, various growth stages of Al whiskers can be investigated under various heating conditions. Finally, we demonstrate a TEM sample preparation method for the cross-section of an individual Al whisker, using focused ion beam (FIB) etching. This technique makes it possible to reduce the thickness of an Al whisker close to the root. Both bright- and dark-field TEM images provide nanostructural information on the whisker/Al thin-film interface.

Ion-beam etching as a technique for preparation of high-Tc superconductor microtips for field-ion microscopy

1990 ◽  
Vol 231 (1-2) ◽  
pp. 240-246
Author(s):  
E.I. Givargizov ◽  
A.N. Stepanova ◽  
A.A. Volobuev ◽  
A.I. Pankrashov ◽  
V.A. Yakimov ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
High Tc ◽  
Field Ion Microscopy ◽  
High Tc Superconductor ◽  
Ion Microscopy

scholarly journals Low-Energy Argon Broad Ion Beam and Narrow Ion Beam Milling of In Situ Lift-Out FIB Specimens

2018 ◽  
Vol 24 (S1) ◽  
pp. 862-863 ◽  
Author(s):  
M.J. Campin ◽  
C.S. Bonifacio ◽  
P.E. Fischione
Keyword(s):  
Ion Beam ◽  
Low Energy
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