Investigation of spatial disorder in graphite by Raman lineshape analysis

2012 ◽  
Vol 90 (10) ◽  
pp. 975-979 ◽  
Author(s):  
Kapil Saxena ◽  
Vivek Kumar ◽  
A.K. Shukla
Keyword(s):  
Raman Scattering ◽  
Lower Energy ◽  
High Sensitivity ◽  
Line Broadening ◽  
Phonon Softening ◽  
Lineshape Analysis ◽  
Electron Phonon Coupling ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Graphitic Plane

Disorder in graphite is studied as a function of phonon softening of Raman active modes. A comprehensive analysis of disorder is discussed here using the G and D modes of the graphite. Two-dimensional disorder is manifested in the correlation length of the sp2 hybridization in the graphitic plane. It is characterized here by lineshape analysis of Raman activated G and D modes. Phonon softening of the G mode is almost insensitive to disorder. It is more asymmetric on the lower energy side with increasing disorder. Phonon softening and line broadening of the D mode have high sensitivity to disorder in polycrystalline graphite. Electron–phonon coupling is responsible for phonon softening and line broadening of the D mode, which is double-resonant Raman scattering involving disorder, electron, and TO (tansverse optical) phonon. Increasing disorder allows TO phonons of higher wavevector and lower energy during double-resonant Raman scattering.

Enhanced Resonant Raman Scattering and Electron−Phonon Coupling from Self-Assembled Secondary ZnO Nanoparticles

2005 ◽  
Vol 109 (39) ◽  
pp. 18385-18390 ◽  
Author(s):  
Hsin-Ming Cheng ◽  
Kuo-Feng Lin ◽  
Hsu ◽  
Chih-Jen Lin ◽  
Li-Jiaun Lin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Zno Nanoparticles ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Self Assembled

Resonant Raman scattering and electron-phonon coupling in the organic superconductor (BEDT-TTF)2[Cu(NCS)2]

1997 ◽  
Vol 86 (1-3) ◽  
pp. 2067-2068 ◽  
Author(s):  
J.E. Eldridge ◽  
Y. Xie ◽  
Y. Lin ◽  
H.H. Wang ◽  
J.M. Williams ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Organic Superconductor ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman Scattering in CdSxSe1−x Nanocrystals: Electron-Phonon Coupling

1994 ◽  
Vol 358 ◽  
Author(s):  
M. Silvestri ◽  
L.W. Hwang ◽  
P. Persans ◽  
J. Schroeder
Keyword(s):  
Phase Transition ◽  
Raman Scattering ◽  
Coupling Strength ◽  
Phonon Coupling ◽  
Transition Pressure ◽  
Pressure Point ◽  
Phase Transition Pressure ◽  
Electron Phonon Coupling ◽  
Resonant Raman ◽  
Resonant Raman Scattering

ABSTRACTWe report pressure and laser tuned Raman scattering studies on CdSxSei1-x nanocrystals. The electron-phonon coupling strength was determined as a function of pressure beyond the bulk phase transition pressure point. The coupling strength at atmospheric pressure determined from the Stokes shifted photoluminescence and resonant Raman scattering is not drastically smaller than the bulk value as might be expected theoretically. As a function of pressure it also shows no abrupt changes at the bulk phase transition pressure point. These results indicate that deep traps play a critical part in the mechanism of the electron-phonon coupling.

RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

Resonant Raman scattering of a-SiNx:H

2001 ◽  
Vol 47 (1-2) ◽  
pp. 50-54 ◽  
Author(s):  
Yan Wang ◽  
Ruifeng Yue ◽  
Hexiang Han ◽  
Xianbo Liao ◽  
Yongqian Wang ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Resonant Raman ◽  
Resonant Raman Scattering
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