Determination of the temperature exponent for the case of the temperature-dependent frequency factor in thermoluminescence

2000 ◽  
Vol 78 (4) ◽  
pp. 253-260 ◽  
Author(s):  
Manabesh Bhattacharya ◽  
W Shambhunath Singh ◽  
P S Mazumdar

We suggest a method for the determination of the temperature exponent in the case of the temperature-dependent frequency factor in thermoluminescence (TL).The applicability of the method has been tested by applying it both to numerically computed and experimental TL peaks.PACS No.: 78.60Kn

2001 ◽  
Vol 79 (9) ◽  
pp. 1133-1139 ◽  
Author(s):  
W S Singh ◽  
M Bhattacharya ◽  
S D Singh ◽  
P S Mazumdar

In this paper, we investigate the consequences of the temperature dependence of the frequency factor on thermoluminescence peaks recorded in a hyperbolic heating profile. The temperature dependence of the frequency factor leads to nonuniqueness in the symmetry factor for a particular order of kinetics (b) and causes an error of the order of 5% in the determination of b and an error of the order of 10% in the determination of activation energy (E). PACS No.: 78.60Kn


2010 ◽  
Vol 84 (5) ◽  
pp. 529-537 ◽  
Author(s):  
Mahua Karmakar ◽  
Bikash Sarkar ◽  
Sk Azharuddin ◽  
P. S. Mazumdar ◽  
S. Dorendrajit Singh ◽  
...  

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Mingming Yang ◽  
Longlong Wang ◽  
Xiaofen Qiao ◽  
Yi Liu ◽  
Yufan Liu ◽  
...  

Abstract The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.


Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 523 ◽  
Author(s):  
Simonas Ramanavičius ◽  
Milda Petrulevičienė ◽  
Jurga Juodkazytė ◽  
Asta Grigucevičienė ◽  
Arūnas Ramanavičius

In this research, the investigation of sensing properties of non-stoichiometric WO3 (WO3−x) film towards some volatile organic compounds (VOC) (namely: Methanol, ethanol, isopropanol, acetone) and ammonia gas are reported. Sensors were tested at several temperatures within the interval ranging from a relatively low temperature of 60 up to 270 °C. Significant variation of selectivity, which depended on the operational temperature of sensor, was observed. Here, the reported WO3/WO3–x-based sensing material opens an avenue for the design of sensors with temperature-dependent sensitivity, which can be applied in the design of new gas- and/or VOC-sensing systems that are dedicated for the determination of particular gas- and/or VOC-based analyte concentration in the mixture of different gases and/or VOCs, using multivariate analysis of variance (MANOVA).


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