Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage

Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures have been investigated using the admittance spectroscopy method in the temperature and voltage ranges of 160–300 K and –4 – 5 V, respectively. Experimental results show that both the main electrical and dielectric parameters, such as barrier height (Φb), depletion layer width (Wd), series resistance (Rs) of structure, real and imaginary parts of dielectric constant (ε′, ε″) and electric modulus (M′ and M″), tanδ, and AC conductivity (σac) were found to be strong functions of temperature and applied bias voltage. M′ and M″ versus V plots have a peak at about 1 V. While the peak position shifted towards negative biases, the magnitude of the peak decreases with increasing temperature. Such peak behavior in M′ and M″ can be attributed to the existence of particular density distribution profile interface states at the interfacial layer–n-Si interface and their reordering and restructure under external electric field and interface polarization. These peaks also indicated that the Au/1% GP+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structure exhibits relaxation phenomena.