The influence of vanadium pentoxide on the structure and dielectric properties of poly(vinyl alcohol)

2010 ◽  
Vol 59 (9) ◽  
pp. 1282-1288 ◽  
Author(s):  
Waleed E Mahmoud ◽  
Ahmed A Al-Ghamdi
1994 ◽  
Vol 30 (2) ◽  
pp. 259-263 ◽  
Author(s):  
M.A. El-Shahawy ◽  
M.M. Elkholy

2014 ◽  
Author(s):  
Sunil G. Rathod ◽  
R. F. Bhajantri ◽  
V. Ravindrachary ◽  
P. K. Pujari ◽  
T. Sheela ◽  
...  

2017 ◽  
Vol 96 (4) ◽  
pp. 903-911 ◽  
Author(s):  
Osamah A. Bin-Dahman ◽  
Mostafizur Rahaman ◽  
Dipak Khastgir ◽  
Mamdouh A. Al-Harthi

2011 ◽  
Vol 121 (5) ◽  
pp. 2870-2876 ◽  
Author(s):  
Sirirat Wacharawichanant ◽  
Nareerut Wutanasiri ◽  
Paveena Srifong ◽  
Usarat Meesangpan ◽  
Supakanok Thongyai

2015 ◽  
Vol 93 (10) ◽  
pp. 1213-1220 ◽  
Author(s):  
H.G. Çetinkaya ◽  
A. Kaya ◽  
Ş. Altındal ◽  
S. Koçyiğit

Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures have been investigated using the admittance spectroscopy method in the temperature and voltage ranges of 160–300 K and –4 – 5 V, respectively. Experimental results show that both the main electrical and dielectric parameters, such as barrier height (Φb), depletion layer width (Wd), series resistance (Rs) of structure, real and imaginary parts of dielectric constant (ε′, ε″) and electric modulus (M′ and M″), tanδ, and AC conductivity (σac) were found to be strong functions of temperature and applied bias voltage. M′ and M″ versus V plots have a peak at about 1 V. While the peak position shifted towards negative biases, the magnitude of the peak decreases with increasing temperature. Such peak behavior in M′ and M″ can be attributed to the existence of particular density distribution profile interface states at the interfacial layer–n-Si interface and their reordering and restructure under external electric field and interface polarization. These peaks also indicated that the Au/1% GP+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structure exhibits relaxation phenomena.


2008 ◽  
Vol 110 (3) ◽  
pp. 1281-1288 ◽  
Author(s):  
F. H. Abd El-Kader ◽  
S. A. Gaafar ◽  
K. H. Mahmoud ◽  
S. I. Bannan ◽  
M. F. H. Abd El-Kader

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