FACTORS AND PROCESSES IN THE GERMINATION OF DATURA FEROX L.

1964 ◽  
Vol 42 (9) ◽  
pp. 1189-1203 ◽  
Author(s):  
A. Soriano ◽  
R. A. Sánchez ◽  
B. A. de Eilberg
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Oxidation Product ◽  
Red Light ◽  
Storage Conditions ◽  
The Other ◽  
Metabolic Processes ◽  
Other Hand ◽  
Inhibitor Level

The germination of Datura ferox seeds is blocked immediately after ripeness by an inhibitor. The decoating of the seeds and certain storage conditions promote germination by favoring the diffusion of the inhibitor or its destruction.Seeds in which the germination blockage due to the inhibitor had been overcome behave as photoblastically positive, responding to the R–FR mechanism. During afterripening, the capacity of the skotomechanism increases as the inhibitor level decreases. The skotomechanism blockage does not disappear with low temperature or with alternating temperatures. On the other hand, high temperature reimposes this blockage.Gibberellic acid replaces the effect of red light, whereas thiourea is not effective.It is postulated, on the basis of the results obtained with this species, and the results of other authors, that the quantity of an oxidation product present, resulting from metabolic processes during storage or the action of red light, controls both germination and the possibility of germination being produced in conditions of light or darkness.

Study on stabilization of cubic Li7La3Zr2O12 by Ge substitution in various atmospheres

2016 ◽  
Vol 09 (06) ◽  
pp. 1642005 ◽  
Author(s):  
Masashi Kotobuki ◽  
Binngong Yan ◽  
Li Lu ◽  
Emil Hanc ◽  
Joanna Molenda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Tetragonal Phase ◽  
The Other ◽  
Cubic Phase ◽  
Other Hand ◽  
High Temperature Xrd ◽  
Li Ion

Stabilization of high Li ion conductive cubic Li7La3Zr2O[Formula: see text] (LLZ) by Ge substitution in air, N2/O2 and N2 atmospheres are studied by high temperature XRD (HT-XRD) of Ge-added tetragonal LLZ (Ge-LLZ). A formation of low temperature cubic phase caused by CO2 absorption during storage of the Ge-LLZ is observed at about 160[Formula: see text]C in all atmospheres. Additionally, impurity formation of La2Zr2O7 and La2O3 also occurs in all atmospheres. On the other hand, stabilization of cubic phase by substitution of Ge is largely influenced by the atmosphere. The cubic phase is observed at 40[Formula: see text]C after heating Ge-LLZ to 700[Formula: see text]C in air while only tetragonal phase appeared after heating in N2/O2. It is concluded that the heating atmosphere largely influences substitution of Ge, resulting in stabilization of the high Li ion conductive cubic phase.

scholarly journals Effect of High and low temperature and different relative humidity on biology of old Serew worm Chrvsomya bezziana (Villeneuve) Diptera: calliphoridae

2004 ◽  
Vol 1 (1) ◽  
pp. 58-64
Author(s):  
Baghdad Science Journal
Keyword(s):  
High Temperature ◽  
Relative Humidity ◽  
Low Temperature ◽  
Laboratory Condition ◽  
The Other ◽  
Old World ◽  
Other Hand ◽  
Suitable Temperature ◽  
Lower Temperature

The effect of some environment faetor (different temperature and relative humidity) on the biology of the old world- screw worm, were studied under laboratory condition, the result showed that non of the eggs hatched at 15°c and under dried eondition which relative humidity between 20-40%, also result showed that the mature larvae needs one days to become pupa since it leaves the larval died at the temperature ranged between 25-40°C at different humidity rates. While it needs 3 days under lower temperature and different humidity to become pu^, on the other hand the results showed that either low temperature and dried condition or high temperature at different humidity rates cause non of pupa became adult. While low temperature (15-20) °c at suitable humidity rate will elongate pupal, further more it is also noticed that the suitable temperature ??'? pupa? development ranged between 25- 35°C under different relative humidity rate and it ranged between 5-8 days.

Energy in Thermal Physics

2021 ◽  
pp. 1-48
Author(s):  
Daniel V. Schroeder
Keyword(s):  
Low Temperature ◽  
Molecular Level ◽  
The Other ◽  
Thermal Physics ◽  
Other Hand ◽  
Energy Flows ◽  
Basic Concepts ◽  
Simple Models

The behavior of energy in bulk-matter systems is subtle. We observe that energy flows spontaneously from high to low temperature; we refer to this flowing energy as heat; and we distinguish heat from work, the transfer of energy through mechanical or other means unrelated to temperature. On the other hand, simple models of gases and solids strongly suggest that at the molecular level all energy is purely mechanical. This introductory chapter surveys these basic concepts of thermal physics, illustrates them with a wide variety of familiar examples, and sets the stage for developing a deeper understanding.

Effects of Solid Volume Fraction on the Gelcasting of Alumina Suspensions

2007 ◽  
Vol 280-283 ◽  
pp. 1041-1044
Author(s):  
Yong Huang ◽  
Li Ming Zhang ◽  
Hai Feng Li ◽  
Tian Ma
Keyword(s):  
Low Temperature ◽  
Rheological Behavior ◽  
Volume Fraction ◽  
Solid Volume Fraction ◽  
The Other ◽  
Sintered Body ◽  
Green Body ◽  
Microstructure And Properties ◽  
Other Hand ◽  
Alumina Suspensions

The effects of solid volume fraction (SVF) on the gelation of alumina suspensions for gelcasting, debonding and sintering of the green body were studied. It was found that with SVF rising, the gelation of alumina suspension delayed; and the strength of green body decreased. On the other hand, high SVF resulted in that polymerized acrylamide split at a relative low temperature. These phenomena manifest that the fast polymerization of monomers in high SVF alumina suspension was inhibited, and the flexibility of the gelcasting was improved. However, Excessive solid volume fraction was prone to a bad rheological behavior of alumina suspension, and deteriorated the microstructure and properties of sintered body.

Voltage-Current (V-I) Characteristics of 1.5kV Class pn Junctions with p-Well Structures on (0001) 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 683-686 ◽  
Author(s):  
Ryouji Kosugi ◽  
T. Sakata ◽  
Y. Sakuma ◽  
K. Suzuki ◽  
Tsutomu Yatsuo ◽  
...  
Keyword(s):  
High Temperature ◽  
The Other ◽  
Annealing Condition ◽  
Test Element ◽  
Significant Deterioration ◽  
Other Hand ◽  
Pn Junctions ◽  
Short Time ◽  
Diode Voltage ◽  
Ion Implanted

We have fabricated the four pn-type junction TEGs (Test Element Groups) having different structure. Those TEGs are close to the double-implanted (Di) MOSFETs, step by step from the simple pn diode. Voltage-current (V-I) characteristics of the hundred TEGs having p-well structure show similar blocking characteristics of those of simple pn diodes on the same wafer. This indicates that the p-well structure itself does not cause a significant deterioration on the blocking yield. On the other hand, the yield is significantly influenced by the annealing condition for ion-implanted layer. The oxide-related hard breakdown on the JFET region dominates the blocking yield. The reach-through breakdown of the TEGs having the n+ region within each p-well becomes largely suppressed by the high-temperature and short-time annealing.

MOSQUITOES OF MANITOBA: II. THE EFFECT OF STORAGE TEMPERATURE AND RELATIVE HUMIDITY ON HATCHING OF EGGS OF AEDES VEXANS AND AEDES ABSERRATUS (DIPTERA: CULICIDAE)

1969 ◽  
Vol 101 (12) ◽  
pp. 1285-1291 ◽  
Author(s):  
R. A. Brust ◽  
R. A. Costello
Keyword(s):  
High Temperature ◽  
Relative Humidity ◽  
Low Temperature ◽  
Storage Temperature ◽  
Storage Conditions ◽  
Aedes Vexans ◽  
Hatching Time ◽  
Saturated Atmosphere

AbstractOptimum storage conditions for eggs of Aedes vexans (Meigen) were found to be a temperature of 2 °C and a saturated atmosphere. These conditions are also suitable for storing eggs of Aedes abserratus (Felt and Young) but this species can be stored at lower temperatures. When eggs of both species are stored at 2 °C and placed in a hatching medium at 2 °C, hatching begins in A. abserratus but not in A. vexans. A comparable hatch in the latter occurs at 10°–15 °C. Desiccation and death of A. vexans embryos occur rapidly at a low relative humidity (20%) and a high temperature (21 °C) but slowly at low relative humidity and a low temperature (4 °C). Eggs that lose a substantial amount of water will still hatch and the larvae develop normally, but hatching time is delayed. The hatching time may be twice as long as in eggs kept in a saturated atmosphere at similar temperatures, indicating that embryos must regain some of the lost water before hatching can occur.

Effect of chromosome 1B, chromosome 6B, and low temperature on the frequency of chromosome pairing at first meiotic metaphase in hexaploid triticale

1983 ◽  
Vol 25 (3) ◽  
pp. 278-282
Author(s):  
Julian B. Thomas ◽  
P. J. Kaltsikes ◽  
S. Shigenaga
Keyword(s):  
Low Temperature ◽  
Common Wheat ◽  
Chromosome Pairing ◽  
Meiotic Metaphase ◽  
The Other ◽  
Hexaploid Triticale ◽  
Other Hand

Chromosome 1B in 'Rosner' and chromosome 6B in line 125 both reduced the frequency with which chromosomes were paired at first meiotic metaphase of hexaploid triticale. On the other hand, chromosome 6B in 'Rosner' and chromosomes 1B and 6B in line 110 had no such effect. The 1B pairing suppressor in 'Rosner' was located on the short arm of the chromosome (1Bs). Between 10 and 30 °C, pairing frequency was quite stable in 'Rosner' triticale in comparison with common wheat, although the level was consistently lower in the triticale. Some reduction of pairing frequency was noted at 10 °C in 'Rosner'. This effect of low temperature did not interact with 1B dosage to cause a disproportionate decrease in pairing frequency when plants with high 1B dosage were grown at 10 °C.

RHIZOPUS ROOT ROT OF SUGAR BEET

1943 ◽  
Vol 21c (8) ◽  
pp. 235-248 ◽  
Author(s):  
A. A. Hildebrand ◽  
L. W. Koch
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Sugar Beet ◽  
Root Rot ◽  
The Other ◽  
Effect Of Temperature ◽  
Experimental Plot ◽  
Optimum Growth ◽  
Causal Organism ◽  
Sugar Beets

During the summer of 1942 sugar beets growing in an experimental plot at the Harrow laboratory were destroyed by a root rot of a type that apparently has been reported only once previously on this host in North America. Wilting of the foliage first attracts attention to affected plants, the roots of which show, externally, grayish-brown discoloured areas and, internally, fairly sharply-delimited, grayish to coffee-coloured lesions, affected tissues being more or less spongy in consistency. The causal organism, found to be a wound parasite, has been identified as Rhizopus arrhizus Fischer. The effect of temperature on the growth in culture and on the pathogenicity of this fungus and of representatives of the species, R. oryzae and R. nigricans, has been studied. It has been found that R. arrhizus and R. oryzae are relatively high temperature organisms, showing optimum growth at about 34° to 36 °C., and each capable of infecting and destroying artificially injured sugar beets most rapidly between 30° and 40 °C. R. nigricans, also a wound parasite is, on the other hand, a relatively low temperature organism showing optimum growth in culture at about 24° and displaying highest infection capability at about 14° to 16 °C.

The Bismuth-Barium Oxides

1998 ◽  
Vol 547 ◽  
Author(s):  
K. Müller ◽  
J.K. Meen ◽  
D. Elthon
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Low Temperature ◽  
Phase Relations ◽  
The Other ◽  
Face Centered Cubic ◽  
Polymorphic Transformations ◽  
Face Centered ◽  
T Phase

AbstractPhase relations have been determined for the Bi-Ba oxide pseudobinary up to 50 cat % Ba in 1 atm of oxygen at 640°-1000°C. The low-temperature α-Bi2O3 polymorph does not dissolve appreciable BaO. All other phases in the system have significant ranges of solution. The δ-Bi2O3 polymorph, stable from 730°C to 825°C is an end-member of a face-centered cubic solid solution (FCCss) that dissolves up to 2.7 % Ba. Ba-saturated FCCss and Bi-saturated rhombohedral (ß) solid solution (6.3 % Ba) melt at a eutectic at 753 °C. Less Bi is needed to saturate the ß phase at lower temperatures so α-Bi2O3 coexists with a ß phase containing 11.5 % Ba at 646°C.The amount of Ba required to saturate the ß phase depends less strongly on temperature. Ba-saturated ß phase contains 19 % Ba at 700°C. These ß materials are in equilibrium with an oxide near Bi3BaO5.5 that undergoes two polymorphic transformations: low-temperature cubic (<700°C); orthorhombic (700-730°C); high-temperature cubic (Cht). There is a eutectic between the ß and Cht, at 775±6°C. At T<700°C, 26.5 % Ba saturates the latter but it can take in up to 29.5 % Ba (at 812°C). At T<815°C the coexisting phase is BiBaO3. A tetragonal (T) phase forms by reaction of Ch, and BiBaO3 and has ~35% BaO at 815°C. The composition span of T widens as temperature increases. Cht, melts incongruently at 820°C to a liquid and T with 29.8 % Ba. Above that temperature the Bi-saturated and Ba-saturated T phases both become more Ba-rich as temperature is elevated. T melts incongruently to liquid and BiBaO3.The δ-Bi2O3 and ß, both anion conductors, have structures based on that of fluorite. The other oxides have perovskite-like structures. Half of the Bi in BiBaO3 is pentavalent and half is trivalent. The other oxides appear to have all their Bi in the 3+ state.

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

2013 ◽  
Vol 740-742 ◽  
pp. 205-208
Author(s):  
Galyna Melnychuk ◽  
Siva Prasad Kotamraju ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
The Other ◽  
Additional Increase ◽  
Other Hand

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.

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