Error Estimates for a Finite Element Method for the Drift Diffusion Semiconductor Device Equations

1994 ◽  
Vol 31 (4) ◽  
pp. 1062-1089 ◽  
Author(s):  
Zhangxin Chen ◽  
Bernardo Cockburn
1995 ◽  
Vol 05 (03) ◽  
pp. 351-365 ◽  
Author(s):  
V. SHUTYAEV ◽  
O. TRUFANOV

This paper is concerned with the numerical analysis of the mathematical model for a semiconductor device with the use of the Boltzmann equation. A mixed initial-boundary value problem for nonstationary Boltzmann-Poisson system in the case of one spatial variable is considered. A numerical algorithm for solving this problem is constructed and justified. The algorithm is based on an iterative process and the finite element method. A numerical example is presented.


2017 ◽  
Vol 22 (1) ◽  
pp. 133-156 ◽  
Author(s):  
Yu Du ◽  
Zhimin Zhang

AbstractWe study the error analysis of the weak Galerkin finite element method in [24, 38] (WG-FEM) for the Helmholtz problem with large wave number in two and three dimensions. Using a modified duality argument proposed by Zhu and Wu, we obtain the pre-asymptotic error estimates of the WG-FEM. In particular, the error estimates with explicit dependence on the wave numberkare derived. This shows that the pollution error in the brokenH1-norm is bounded byunder mesh conditionk7/2h2≤C0or (kh)2+k(kh)p+1≤C0, which coincides with the phase error of the finite element method obtained by existent dispersion analyses. Herehis the mesh size,pis the order of the approximation space andC0is a constant independent ofkandh. Furthermore, numerical tests are provided to verify the theoretical findings and to illustrate the great capability of the WG-FEM in reducing the pollution effect.


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