Analysis of a finite element method for the drift-diffusion semiconductor device equations: the multidimensional case

1995 ◽  
Vol 71 (1) ◽  
pp. 1-28 ◽  
Author(s):  
Zhangxin Chen ◽  
Bernardo Cockburn
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Semiconductor Device ◽  
Multidimensional Case ◽  
Drift Diffusion ◽  
Element Method

NUMERICAL ANALYSIS OF THE FINITE ELEMENT METHOD APPLIED TO THE BOLTZMANN-POISSON SYSTEM

1995 ◽  
Vol 05 (03) ◽  
pp. 351-365 ◽  
Author(s):  
V. SHUTYAEV ◽  
O. TRUFANOV
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Numerical Analysis ◽  
Semiconductor Device ◽  
Initial Boundary ◽  
Initial Boundary Value Problem ◽  
Poisson System ◽  
The Finite Element Method ◽  
Initial Boundary Value ◽  
Element Method

This paper is concerned with the numerical analysis of the mathematical model for a semiconductor device with the use of the Boltzmann equation. A mixed initial-boundary value problem for nonstationary Boltzmann-Poisson system in the case of one spatial variable is considered. A numerical algorithm for solving this problem is constructed and justified. The algorithm is based on an iterative process and the finite element method. A numerical example is presented.

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