Effect of the gas phase composition and of the method of the preparation of the solid on the reaction kinetics of sodium sulphite oxidation

1975 ◽  
Vol 40 (6) ◽  
pp. 1657-1667 ◽  
Author(s):  
J. Mareček ◽  
J. Šubrt ◽  
E. Erdös
Keyword(s):  
Phase Composition ◽  
Reaction Kinetics ◽  
Gas Phase ◽  
Sodium Sulphite ◽  
Kinetics Of

Absorption Spectrum and Reaction Kinetics of the HO2Radical in the Gas Phase

1972 ◽  
Vol 56 (9) ◽  
pp. 4426-4432 ◽  
Author(s):  
C. J. Hochanadel ◽  
J. A. Ghormley ◽  
Paul J. Ogren
Keyword(s):  
Absorption Spectrum ◽  
Reaction Kinetics ◽  
Gas Phase ◽  
Kinetics Of

Reaction kinetics of nitrogen dioxide with methanol in the gas phase

1985 ◽  
Vol 19 (3) ◽  
pp. 262-264 ◽  
Author(s):  
Seiichiro. Koda ◽  
Kota. Yoshikawa ◽  
Jun. Okada ◽  
Kazuo. Akita
Keyword(s):  
Nitrogen Dioxide ◽  
Reaction Kinetics ◽  
Gas Phase ◽  
Kinetics Of

Nitrogen Incorporation and Growth Kinetics of GaAsN/GaAs Epilayers Grown by MOVPE

2000 ◽  
Vol 616 ◽  
Author(s):  
Laurent Auvray ◽  
Hervé Dumont ◽  
Jacques Dazord ◽  
Yves Monteil ◽  
Jean Bouix
Keyword(s):  
Activation Energy ◽  
Phase Composition ◽  
Gas Phase ◽  
Competitive Adsorption ◽  
Nonlinear Function ◽  
Group V ◽  
Nitrogen Incorporation ◽  
Nitrogen Desorption ◽  
Kinetics Of ◽  
Growth Temperature Range

AbstractThe nitrogen incorporation behavior in GaAs was investigated in the growth temperature range 500-600°C. It was observed that the temperature-dependence of the nitrogen incorporation exhibits two regimes. At 530°C, the nitrogen content x is a nonlinear function of the gas-phase composition indicating a surface-controlled reaction mechanism. The N composition varies slowly with 500°C < T < 560°C with an activation energy of 0.6 eV. For T < 560°C, N decreases exponentially with Ea= 3.7 eV, interpreted in terms of nitrogen desorption. In light of experimental results, we propose a surface kinetic model based on the competitive adsorption of group V precursors.

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